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| 型號： | HYB18L256160BF-7.5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | RT ANG PCB CONT .40/1.295 BULK |
| 中文描述： | BJAWBMSpecialty DRAM的移動RAM |
| 文件頁數(shù)： | 23/49頁 |
| 文件大小： | 1327K |
| 代理商： | HYB18L256160BF-7.5 |
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Data Sheet
23
V1.4, 2004-04-30
HY[B/E]18L256160B[C/F]-7.5
256-Mbit Mobile-RAM
Functional Description
Figure 14
Single READ Burst (CAS Latency = 3)
Data from any READ burst may be concatenated with data from a subsequent READ command. In either case, a
continuous flow of data can be maintained. A READ command can be initiated on any clock cycle following a
previous READ command, and may be performed to the same or a different (active) bank. The first data element
from the new burst follows either the last element of a completed burst (
Figure 15
) or the last desired data element
of a longer burst which is being truncated (
Figure 16
). The new READ command should be issued x cycles after
the first READ command, where x equals the number of desired data elements.
Figure 15
Consecutive READ Bursts
Ba A, Col n = bank A, column n
DO n = Data Out from column n
Burst Length = 4 in the case shown.
3 subsequent elements of Data Out are provided in the programmed order following DO n.
= Don't Care
CL=3
t
RCD
t
RP
t
RAS
t
RC
Command
NOP
READ
NOP
NOP
NOP
PRE
NOP
ACT
ACT
NOP
NOP
CLK
AP = Auto Precharge
Dis AP = Disable Auto Precharge
Address
A10 (AP)
Pre Bank A
Pre All
AP
Dis AP
DQ
DO n+1
DO n
DO n+2
DO n+3
Ba A,
Row b
Row b
Ba A,
Row x
Row x
Ba A,
Col n
Ba A, Col n (b) = Bank A, Column n (b)
DO n (b) = Data Out from column n (b)
Burst Length = 4 in the case shown.
3 subsequent elements of Data Out are provided in the programmed order following DO n (b).
= Don't Care
CLK
CL=2
CL=3
Command
NOP
READ
NOP
NOP
NOP
NOP
NOP
READ
NOP
Address
Ba A,
Col b
Ba A,
Col n
DQ
DO n+1
DO n
DO n+2
DO n+3
DO b+2
DO b
DO b+1
DQ
DO n+1
DO n
DO n+2
DO n+3
DO b+1
DO b
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相關代理商/技術參數(shù) |
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|---|---|
| HYB18L256160BFL-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
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