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| 型號： | HYB18L256160BF-7.5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | RT ANG PCB CONT .40/1.295 BULK |
| 中文描述： | BJAWBMSpecialty DRAM的移動(dòng)RAM |
| 文件頁數(shù)： | 22/49頁 |
| 文件大?。?/td> | 1327K |
| 代理商： | HYB18L256160BF-7.5 |
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HY[B/E]18L256160B[C/F]-7.5
256-Mbit Mobile-RAM
Functional Description
Data Sheet
22
V1.4, 2004-04-30
During READ bursts, the valid data-out element from the starting column address is available following the CAS
latency after the READ command. Each subsequent data-out element is valid nominally at the next positive clock
edge. Upon completion of a READ burst, assuming no other READ command has been initiated, the DQs go to
High-Z state.
Figure 13
and
Figure 14
show single READ bursts for each supported CAS latency setting.
Figure 13
Single READ Burst (CAS Latency = 2)
Table 10
Parameter
Timing Parameters for READ
Symbol
- 7.5
Units
Notes
min.
–
–
1.0
3.0
2.5
–
67
19
45
19
max.
5.4
6.0
–
7.0
–
2
–
–
100k
–
Access time from CLK
CL = 3
CL = 2
t
AC
t
AC
t
LZ
t
HZ
t
OH
t
DQZ
t
RC
t
RCD
t
RAS
t
RP
ns
ns
ns
ns
ns
t
CK
ns
ns
ns
ns
–
DQ low-impedance time from CLK
DQ high-impedance time from CLK
Data out hold time
DQM to DQ High-Z delay (READ Commands)
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
ACTIVE to PRECHARGE command period
PRECHARGE command period
–
–
–
1)
1)
1)
1)
1) These parameters account for the number of clock cycles and depend on the operating frequency as follows:
no. of clock cycles = specified delay / clock period; round up to next integer.
Ba A, Col n = bank A, column n
DO n = Data Out from column n
Burst Length = 4 in the case shown.
3 subsequent elements of Data Out are provided in the programmed order following DO n.
= Don't Care
CL=2
t
RCD
t
RAS
t
RC
t
RP
CLK
Command
NOP
READ
NOP
NOP
NOP
PRE
NOP
ACT
ACT
Address
Ba A,
Row b
Ba A,
Col n
Ba A,
Row x
A10 (AP)
Pre Bank A
Pre All
Dis AP
Row x
Row b
AP
DO n+1
DO n
DO n+2
DO n+3
DQ
AP = Auto Precharge
Dis AP = Disable Auto Precharge
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HYB18L256160BFL-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
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