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| 型號： | HYB18L256160BF-7.5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | RT ANG PCB CONT .40/1.295 BULK |
| 中文描述： | BJAWBMSpecialty DRAM的移動RAM |
| 文件頁數(shù)： | 34/49頁 |
| 文件大?。?/td> | 1327K |
| 代理商： | HYB18L256160BF-7.5 |
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HY[B/E]18L256160B[C/F]-7.5
256-Mbit Mobile-RAM
Functional Description
Data Sheet
34
V1.4, 2004-04-30
2.4.8
PRECHARGE
Figure 36
PRECHARGE Command
The PRECHARGE command is used to deactivate
(close) the open row in a particular bank or the open
row in all banks. The bank(s) will be available for a
subsequent row access a specified time (
t
RP
) after the
PRECHARGE command is issued. Input A10
determines whether one or all banks are to be
precharged, and in the case where only one bank is to
be precharged, inputs BA0, BA1 select the bank.
Otherwise BA0, BA1 are treated as “Don’t Care”.
Once a bank has been precharged, it is in the idle state
and must be activated prior to any READ or WRITE
commands being issued to that bank. A PRECHARGE
command will be treated as a NOP if there is no open
row in that bank, or if the previously open row is already
in the process of precharging.
2.4.8.1
Auto Precharge is a feature which performs the same individual-bank precharge functions described above, but
without requiring an explicit command. This is accomplished by using A10 to enable Auto Precharge in conjunction
with a specific READ or WRITE command. A precharge of the bank/row that is addressed with the READ or
WRITE command is automatically performed upon completion of the READ or WRITE burst. Auto Precharge is
nonpersistent in that it is either enabled or disabled for each individual READ or WRITE command. Auto Precharge
ensures that the precharge is initiated at the earliest valid stage within a burst. The user must not issue another
command to the same bank until the precharge (
t
RP
) is completed. This is determined as if an explicit
PRECHARGE command was issued at the earliest possible time, as described for each burst type.
AUTO PRECHARGE
BA0,BA1
BA
CS
CKE
(High)
CLK
= Don't Care
BA = Bank Address
(if A10 = L, otherwise Don't Care)
RAS
CAS
WE
A10
One Bank
All Banks
A0-A9
A11,A12
Table 12
Parameter
Timing Parameters for PRECHARGE
Symbol
- 7.5
Units
Notes
min.
45
14
19
max.
100k
–
–
ACTIVE to PRECHARGE command period
WRITE recovery time
PRECHARGE command period
t
RAS
t
WR
t
RP
ns
ns
ns
1)
1) These parameters account for the number of clock cycles and depend on the operating frequency as follows:
no. of clock cycles = specified delay / clock period; round up to next integer.
1)
1)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L256160BFL-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BFX-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
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| HYB18L256169BF-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:256-Mbit Mobile-RAM |
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