參數(shù)資料
型號(hào): HM5212805DLTD-10
元件分類: DRAM
英文描述: 16M X 8 SYNCHRONOUS DRAM, 8 ns, PDSO54
封裝: 0.400 INCH, PLASTIC, TSOP2-54
文件頁數(shù): 24/53頁
文件大?。?/td> 552K
代理商: HM5212805DLTD-10
HM5212165D Series, HM5212805D Series
30
Write command to Precharge command interval (same bank): When the precharge command is
executed for the same bank as the write command that preceded it, the minimum interval between the two
commands is 1 clock. However, if the burst write operation is unfinished, the input data must be masked
by means of DQM, DQMU/DQML for assurance of the clock defined by t
DPL.
WRITE to PRECHARGE Command Interval (same bank)
Burst Length = 4 (To stop write operation)
CLK
Command
Din
WRIT
PRE/PALL
tDPL
DQM,
DQMU/DQML
CLK
in A0
in A1
Command
Din
WRIT
PRE/PALL
DQM,
DQMU/DQML
tDPL
Burst Length = 4 (To write all data)
CLK
in A0
in A1
in A2
Command
Din
WRIT
PRE/PALL
in A3
DQM,
DQMU/DQML
tDPL
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HM5212805FLTD-75 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword × 16-bit × 4-bank/4-Mword × 8-bit × 4-bank PC/133, PC/100 SDRAM
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HM5212805FLTD-B60 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword X 16-bit X 4-bank/4-Mword X 8-bit X 4-bank PC/133, PC/100 SDRAM
HM5212805FTD-75 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword × 16-bit × 4-bank/4-Mword × 8-bit × 4-bank PC/133, PC/100 SDRAM
HM5212805FTD-A60 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword X 16-bit X 4-bank/4-Mword X 8-bit X 4-bank PC/133, PC/100 SDRAM