參數(shù)資料
型號: HM5212805DLTD-10
元件分類: DRAM
英文描述: 16M X 8 SYNCHRONOUS DRAM, 8 ns, PDSO54
封裝: 0.400 INCH, PLASTIC, TSOP2-54
文件頁數(shù): 10/53頁
文件大小: 552K
代理商: HM5212805DLTD-10
HM5212165D Series, HM5212805D Series
18
Mode Register Configuration
The mode register is set by the input to the address pins (A0 to A13) during mode register set cycles. The
mode register consists of five sections, each of which is assigned to address pins.
A13, A12, A11, A10, A9 A8: (OPCODE): The SDRAM has two types of write modes. One is the burst
write mode, and the other is the single write mode. These bits specify write mode.
Burst read and burst write: Burst write is performed for the specified burst length starting from the
column address specified in the write cycle.
Burst read and single write: Data is only written to the column address specified during the write cycle,
regardless of the burst length.
A7: Keep this bit Low at the mode register set cycle. If this pin is high, the vender test mode is set.
A6, A5, A4: (LMODE): These pins specify the CAS latency.
A3: (BT): A burst type is specified. When full-page burst is performed, only "sequential" can be selected.
A2, A1, A0: (BL): These pins specify the burst length.
A2 A1
A0
Burst length
00
0
1
00
1
2
01
0
4
01
1
8
1
F.P.
BT=0
BT=1
10
0
R
11
0
R
1
2
4
8
R
A3
0 Sequential
1
Interleave
Burst type
A6
A5
A4 CAS latency
00
0
R
00
1
R
01
0
2
01
1
R
1XX
R
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
OPCODE
0
LMODE
BT
BL
A9
0
0R
Write mode
A8
0
1
Burst read and burst write
1
Burst read and single write
0
1R
1
10
1
R
F.P. = Full Page (512: HM5212165)
(1024: HM5212805)
R is Reserved (inhibit)
X: 0 or 1
A11
A10
X
A11
X
00
A12
A13
X
0
A12
X
0
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