參數(shù)資料
型號(hào): HM5212805DLTD-10
元件分類: DRAM
英文描述: 16M X 8 SYNCHRONOUS DRAM, 8 ns, PDSO54
封裝: 0.400 INCH, PLASTIC, TSOP2-54
文件頁(yè)數(shù): 17/53頁(yè)
文件大小: 552K
代理商: HM5212805DLTD-10
HM5212165D Series, HM5212805D Series
24
Full-page Burst Stop
Burst stop command during burst read: The burst stop (BST) command is used to stop data output
during a full-page burst. The BST command sets the output buffer to High-Z and stops the full-page burst
read. The timing from command input to the last data changes depending on the CAS latency setting. In
addition, the BST command is valid only during full-page burst mode, and is illegal with burst lengths 1, 2,
4 and 8.
CAS latency
BST to valid data
BST to high impedance
212
CAS Latency = 2, Burst Length = full page
l
= 1 clock
BSR
CLK
Command
DQ (output)
out
l
= 2 clocks
BSH
BST
out
Burst stop command at burst write: The burst stop command (BST command) is used to stop data input
during a full-page burst write. No data is written in the same clock as the BST command, and in
subsequent clocks. In addition, the BST command is only valid during full-page burst mode, and is illegal
with burst lengths of 1, 2, 4 and 8. And an interval of t
DPL is required between last data-in and the next
precharge command.
Burst Length = full page
t
CLK
Command
DQ (input)
in
DPL
in
PRE/PALL
BST
I
= 0 clock
BSW
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HM5212805FTD-75 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword × 16-bit × 4-bank/4-Mword × 8-bit × 4-bank PC/133, PC/100 SDRAM
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