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參數(shù)資料
| 型號： | GT28F320D18B110 |
| 英文描述： | x16 Flash EEPROM |
| 中文描述： | x16閃存EEPROM |
| 文件頁數(shù)： | 75/83頁 |
| 文件大?。?/td> | 836K |
| 代理商： | GT28F320D18B110 |
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28F320D18
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71
A.5
System Interface Information
.
A.6
Device Geometry Information
This field provides critical details of the flash device geometry.
Table 18. System Interface Information
Offset
Length
Description
Address
Hex Code
Value
1Bh
1
V
logic supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
1B:
--17
1.7 V
1Ch
1
V
logic supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
1C:
--19
1.9 V
1Dh
1
V
[programming] supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
1D:
--B4
11.4 V
1Eh
1
V
[programming] supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
1E:
--C6
12.6 V
1Fh
1
“n” such that typical single word program time-out = 2
n
μs
1F:
--05
32 μs
20h
1
“n” such that typical max. buffer write time-out = 2
n
μs
20:
--00
n/a
21h
1
“n” such that typical block erase time-out = 2
n
ms
21:
--0A
1 s
22h
1
“n” such that typical full chip erase time-out = 2
n
ms
22:
--00
n/a
23h
1
“n” such that maximum word program time-out = 2
n
times typical
23:
--04
512 μs
24h
1
“n” such that maximum buffer write time-out = 2
n
times typical
24:
--00
n/a
25h
1
“n” such that maximum block erase time-out = 2
n
times typical
25:
--03
8 s
26h
1
“n” such that maximum chip erase time-out = 2
n
times typical
26:
--00
n/a
Table 19. Device Geometry Information
Offset
Length
Description
Code
27h
1
“n” such that device size = 2
n
in number of bytes
27:
See
Device
Geometry
Definition
Table
--01
--00
--00
--00
--03
28h
2
Flash device interface: x8 async x16 async x8/x16 async
28:00,29:00 28:01,29:00 28:02,29:00
“n” such that maximum number of bytes in write buffer = 2
n
28:
29:
2A:
2B:
2C:
x16
2Ah
2
0
2Ch
1
Number of erase block regions within device:
1. x = 0 means no erase blocking; the device erases in “bulk”
2. x specifies the number of device or partition regions with
one or more contiguous same-size erase blocks.
3. Symmetrically blocked partitions have one blocking region
4. Partition size = (total blocks) x (individual block size)
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GT28F320D18B120 | x16 Flash EEPROM |
| GT3-20DP-2.5DSA | Antenna, Sensor, and Communications Trunk Line Connections |
| GT3TK-36DP-DSA | Antenna, Sensor, and Communications Trunk Line Connections |
| GT3TK-48TP-DS | Antenna, Sensor, and Communications Trunk Line Connections |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GT28F320D18B120 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM |
| GT28F320S3-100 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:WORD-WIDE FlashFile⑩ MEMORY FAMILY |
| GT28F320S3-120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:WORD-WIDE FlashFile MEMORY FAMILY |
| GT28F320W18BC60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel? Wireless Flash Memory |
| GT28F320W18BC80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel? Wireless Flash Memory |
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