參數(shù)資料
型號: GT28F320D18B110
英文描述: x16 Flash EEPROM
中文描述: x16閃存EEPROM
文件頁數(shù): 56/83頁
文件大?。?/td> 836K
代理商: GT28F320D18B110
28F320D18
52
Product Preview
8.2
Extended Temperature Operation
NOTES:
1. See DC Characteristics tables for voltage range-specific specifications.
2. Applying V
=11.4 V– 12.6 V during a program or erase can be done for a maximum of 1000 cycles on the
main blocks and 2500 cycles on the parameter blocks. A permanent connection to V
PP
= 11.4 V– 12.6 V is
not allowed and can cause damage to the device.
8.3
Capacitance
T
A
= +25°C, f = 1 MHz
NOTE:
1. Sampled, not 100% tested.
Symbol
Parameter
Notes
Min
Nominal
Max
Unit
T
A
Operating temperature
-40
+25
+85
°C
V
CC
V
CC
supply voltage
1
1.65
1.8
1.95
V
V
CCQ
I/O supply voltage
1
1.65
1.8
1.95
V
V
PP1
V
PP
supply voltage when used as a logic control
1
0.9
1.8
1.95
V
V
PP2
V
PP
supply voltage
1, 2
11.4
12
12.6
V
Main block erase cycling; V
PP
= 1.8 V
100,000
Cycles
Parameter block erase cycling; V
PP
= 1.8 V
100,000
Cycles
Cycling
Main block erase cycling; V
PP
= 12 V, 80 hrs.
1000
Cycles
Parameter block erase cycling; V
PP
= 12 V, 80 hrs.
2500
Cycles
Maximum V
PP
hours at 12 V
80
Hours
Sym
Parameter
(1)
Typ
Max
Unit
Condition
C
IN
Input Capacitance
6
8
pF
V
IN
= 0.0 V
C
OUT
Output Capacitance
8
12
pF
V
OUT
= 0.0 V
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