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| 型號： | GT28F320D18B110 |
| 英文描述： | x16 Flash EEPROM |
| 中文描述： | x16閃存EEPROM |
| 文件頁數(shù)： | 39/83頁 |
| 文件大小： | 836K |
| 代理商： | GT28F320D18B110 |
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28F320D18
Product Preview
35
7.1.1.6.1
Circuit Board V
PP
Trace
Designing for in-system writes to the flash memory requires special consideration of the V
PP
power supply trace by the printed circuit board designer. The V
PP
pin supplies the flash memory
cells current for programming and erasing. V
PP
trace widths and layout should be similar to that of
V
CC
. Adequate V
PP
supply traces, and decoupling capacitors placed adjacent to the component,
will decrease spikes and overshoots.
7.1.2
Flash Core and I/O Voltage
1.8 Volt Dual-Plane Flash memory matches a true 1.8 V EIA/JEDEC Standard from 1.65 V to
1.95 V. It can read and program down to 1.65 V. The flash device is separated into two sections, the
core and the I/O (
Figure 14
). There are two separate power pins, V
CC
and V
CCQ
which provide
power to the device’s core, and to the I/O respectively. The separate V
CCQ
pin can help provide
noise isolation from the V
CC
power supply when connected to a separate 1.8 Volt supply. V
CC
must
always be at the same or higher voltage than the voltage applied to V
CCQ
, they can be connected
together.
The total power consumption of the device is the sum of the power consumed by the core and the
power consumed by the I/Os. The total power used by the I/O pins is a function of the I/O voltage,
the operating frequency, and the capacitance of the pins as shown in the following equation. C
L
is
the load capacitance and f is the I/O switching frequency.
P
READ_I/O
= 0.5 * C
L
* f * (V
CCQ
)
2
* (number of I/O pins)
More information on I/O power consumption can be found in applications note
AP-641 Achieving
Low Power with Advanced Boot Block Flash Memory
.
For fast production programming, 1.8 Volt Dual-Plane Flash memory includes a 12 V
programming feature. With 12 V connected to V
PP
, programming time is significantly reduced,
which is important for fast factory programming. When used in mobile applications where a
second 12 V supply is unavailable, V
PP
program voltage must be 1.65 V—1.95 V during program
and erase cycles. Connecting V
PP
to a 12 V supply (11.4 V—12.6 V) should only be done for a
maximum of 1000 cycles on the main blocks and 2500 cycles on the parameter blocks, and should
not be connected for more than 80 hours.
Figure 14. Flash Core and I/O Voltage Separation
I/O
Data
Pins
CORE
OE#
V
CC
V
CCQ
C
L
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GT28F320D18B120 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM |
| GT28F320S3-100 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:WORD-WIDE FlashFile⑩ MEMORY FAMILY |
| GT28F320S3-120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:WORD-WIDE FlashFile MEMORY FAMILY |
| GT28F320W18BC60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel? Wireless Flash Memory |
| GT28F320W18BC80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel? Wireless Flash Memory |
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