參數(shù)資料
型號(hào)： GT28F320D18B110
英文描述： x16 Flash EEPROM
中文描述： x16閃存EEPROM
文件頁數(shù)： 5/83頁
文件大?。?/td> 836K
代理商： GT28F320D18B110
28F320D18
Product Preview
1
1.0
Introduction
This datasheet contains information about the 32-Mbit 1.8 Volt Intel
Dual-Plane Flash memory.
Section 1.0 provides a flash memory overview. Sections 2.0 through 6.0 describe the memory
functionality. Section 7.0 describes the design considerations for this device and Section 8.0
describes the electrical specifications for extended temperature product offerings.
1.1
Document Conventions
Throughout this document, references are made to bottom, top, parameter, and main partitions. To
clarify these references, the following convention has been adopted:
Main partition
: contains only main blocks.
Parameter partition
: contains a mixture of main and parameter blocks.
Bottom partition:
the partition located at the lowest physical device address. This partition
may be a main partition or a parameter partition.
Top partition
: the partition located at the highest physical device address. This partition may
be a main partition or a parameter partition.
Bottom parameter device
: has the parameter partition at the bottom of the memory map with
the parameter blocks at the bottom of that partition. This was formerly referred to as bottom-
boot. Since many applications actually boot and execute code from the top (main) blocks and
treat the bottom (parameter) blocks as data blocks, bottom-boot and top-boot have become
misnomers, thus the nomenclature change.
Top parameter device
: has the parameter partition at the top of the memory map with its
parameter blocks at the top. This was formerly referred to as a top-boot device.
Main block(s)
: 32-Kword block
Parameter block(s)
: 4-Kword block
1.2
Product Overview
The 1.8 Volt Dual-Plane Flash memory provides simultaneous read while write/erase capability.
The memory provides high performance reads at low voltage with a 16-bit data bus. Individually
erasable blocks are optimally sized for code and data storage. The eight 4-Kword parameter blocks
are located in the parameter partition. The rest of the device is grouped into sixty-three 32-Kword
main blocks within the main and parameter partitions.
By dividing the flash memory array into two isolated partitions, simultaneous operation capability
permits program or block-erase operations during read operations. The main partition is of the
memory and contains only main blocks. The parameter partition is of the total memory and
contains parameter blocks and main blocks. Burst reads are limited to within a partition. Usage of
simultaneous modes will be described further throughout this document.
The device’s optimized architecture and interface dramatically increases read performance beyond
asynchronous reads. The device supports asynchronous word accesses, 4-word page mode and
synchronous burst reads from main blocks. Parameter blocks support asynchronous word accesses,
4-word page mode and single synchronous reads only.
相關(guān)PDF資料
PDF描述
GT28F320D18B120 x16 Flash EEPROM
GT3-20DP-2.5DSA Antenna, Sensor, and Communications Trunk Line Connections
GT3TK-36DP-DSA Antenna, Sensor, and Communications Trunk Line Connections
GT3TK-48TP-DS Antenna, Sensor, and Communications Trunk Line Connections
GT3-16DP-2.5DSA Antenna, Sensor, and Communications Trunk Line Connections
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GT28F320D18B120 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM
GT28F320S3-100 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:WORD-WIDE FlashFile⑩ MEMORY FAMILY
GT28F320S3-120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:WORD-WIDE FlashFile MEMORY FAMILY
GT28F320W18BC60 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel? Wireless Flash Memory
GT28F320W18BC80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel? Wireless Flash Memory
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