參數(shù)資料
型號(hào)： GS8342Q08AE-278
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 4M X 8 DDR SRAM, 0.45 ns, PBGA165
封裝： 15 X 17 MM, 1 MM PITCH, FPBGA-165
文件頁(yè)數(shù)： 8/35頁(yè)
文件大?。?/td> 1045K
代理商： GS8342Q08AE-278
GS8342Q08/09/18/36AE-278/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06a 7/2008
16/35
2006, GSI Technology
State Diagram
Power-Up
Read NOP
Load New
Read Address
DDR Read
Write NOP
Load New
Write Address
DDR Write
WRITE
READ
WRITE
READ
WRITE
Always
(Fixed)
Always
(Fixed)
READ
WRITE
Notes:
1. Internal burst counter is fixed PQ 1-bit linear (i.e., when first address is A0+), next internal burst address is A0+1.
2. “READ” refers to read active status with R = Low, “READ” refers to read inactive status with R = High. The same is
true for “WRITE” and “WRITE”.
3. Read and write state machine can be active simultaneously.
4. State machine control timing sequence is controlled by K.
相關(guān)PDF資料
PDF描述
GS84018AB-190 256K X 18 CACHE SRAM, 7.5 ns, PBGA119
GS840E18AGT-150T 256K X 18 CACHE SRAM, 10 ns, PQFP100
GS840E18AT-166IT 256K X 18 CACHE SRAM, 8.5 ns, PQFP100
GS840F36AGT-10T 128K X 36 CACHE SRAM, 10 ns, PQFP100
GS840H18AT-100T 256K X 18 CACHE SRAM, 12 ns, PQFP100
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8342Q09AE-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 36MBIT 4M X 9 0.45NS 165FPBGA - Trays
GS8342Q10BD-200 制造商:GSI Technology 功能描述:165 FBGA - Bulk
GS8342Q18AE-167 制造商:GSI 功能描述: 制造商:GSI Technology 功能描述:
GS8342Q18AE-167I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 36MBIT 2MX18 0.5NS 165FPBGA - Trays
GS8342Q18AE-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 36MBIT 2MX18 0.45NS 165FPBGA - Trays
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