參數(shù)資料
型號(hào)： GS8342Q08AE-278
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 4M X 8 DDR SRAM, 0.45 ns, PBGA165
封裝： 15 X 17 MM, 1 MM PITCH, FPBGA-165
文件頁(yè)數(shù)： 13/35頁(yè)
文件大小： 1045K
代理商： GS8342Q08AE-278
GS8342Q08/09/18/36AE-278/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06a 7/2008
20/35
2006, GSI Technology
Programmable Impedance HSTL Output Driver DC Electrical Characteristics
Parameter
Symbol
Min.
Max.
Units Notes
Output High Voltage
VOH1
VDDQ/2 – 0.12 VDDQ/2 + 0.12
V
1, 3
Output Low Voltage
VOL1
VDDQ/2 – 0.12 VDDQ/2 + 0.12
V
2, 3
Output High Voltage
VOH2
VDDQ – 0.2
VDDQ
V
4, 5
Output Low Voltage
VOL2
Vss
0.2
V
4, 6
Notes:
1.
IOH = (VDDQ/2) / (RQ/5) +/– 15% @ VOH = VDDQ/2 (for: 175Ω ≤ RQ ≤ 350Ω).
2.
IOL = (VDDQ/2) / (RQ/5) +/– 15% @ VOL = VDDQ/2 (for: 175Ω ≤ RQ ≤ 350Ω).
3. Parameter tested with RQ = 250
Ω and VDDQ = 1.5 V or 1.8 V
4. 0
Ω ≤ RQ ≤ ∞Ω
5. IOH = –1.0 mA
6. IOL = 1.0 mA
Operating Currents
Parameter
Symbol
Test Conditions
-278
-250
-200
-167
Notes
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
Operating Current (x36): DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
850 mA
860 mA
800 mA
810 mA
750 mA
760 mA
700 mA
710 mA
2, 3
Operating Current (x18): DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
800 mA
810 mA
750 mA
760 mA
700 mA
710 mA
650 mA
660 mA
2, 3
Operating Current (x9): DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
750 mA
760 mA
700 mA
710 mA
650 mA
660 mA
600 mA
610 mA
2, 3
Operating Current (x8): DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
750 mA
760 mA
700 mA
710 mA
650 mA
660 mA
600 mA
610 mA
2, 3
Standby Current (NOP): DDR
ISB1
Device deselected,
IOUT = 0 mA, f = Max,
All Inputs
≤ 0.2 V or ≥ VDD
– 0.2 V
260 mA
270 mA
250 mA
260 mA
230 mA
240 mA
215 mA
225 mA
2, 4
Notes:
1. Power measured with output pins floating.
2. Minimum cycle, IOUT = 0 mA
3. Operating current is calculated with 50% read cycles and 50% write cycles.
4. Standby Current is only after all pending read and write burst operations are completed.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8342Q09AE-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 36MBIT 4M X 9 0.45NS 165FPBGA - Trays
GS8342Q10BD-200 制造商:GSI Technology 功能描述:165 FBGA - Bulk
GS8342Q18AE-167 制造商:GSI 功能描述: 制造商:GSI Technology 功能描述:
GS8342Q18AE-167I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 36MBIT 2MX18 0.5NS 165FPBGA - Trays
GS8342Q18AE-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 36MBIT 2MX18 0.45NS 165FPBGA - Trays
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