參數(shù)資料
型號: GS8161EV32BD-200
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 512K X 32 CACHE SRAM, 6.5 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, FBGA-165
文件頁數(shù): 33/34頁
文件大?。?/td> 864K
代理商: GS8161EV32BD-200
GS8161EV18B(T/D)/GS8161EV32B(D)/GS8161EV36B(T/D)
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 9/2004
8/34
2004, GSI Technology
GS8161EV18/32/36BD 165-Bump BGA Pin Description
Symbol
Type
Description
A0, A1
I
Address field LSBs and Address Counter Preset Inputs
A
I
Address Inputs
DQA
DQB
DQC
DQD
I/O
Data Input and Output pins
BA, BB, BC, BD
I
Byte Write Enable for DQA, DQB, DQC, DQD I/Os; active low
NC
No Connect
CK
I
Clock Input Signal; active high
BW
I
Byte Write—Writes all enabled bytes; active low
GW
I
Global Write Enable—Writes all bytes; active low
E1
I
Chip Enable; active low
E3
I
Chip Enable; active low
E2
I
Chip Enable; active high
G
I
Output Enable; active low
ADV
I
Burst address counter advance enable; active l0w
ADSC, ADSP
I
Address Strobe (Processor, Cache Controller); active low
ZZ
I
Sleep mode control; active high
FT
I
Flow Through or Pipeline mode; active low
LBO
I
Linear Burst Order mode; active low
TMS
I
Scan Test Mode Select
TDI
I
Scan Test Data In
TDO
O
Scan Test Data Out
TCK
I
Scan Test Clock
MCL
Must Connect Low
VDD
I
Core power supply
VSS
I
I/O and Core Ground
VDDQ
I
Output driver power supply
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