參數(shù)資料
型號： GS8161EV32BD-200
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 512K X 32 CACHE SRAM, 6.5 ns, PBGA165
封裝： 13 X 15 MM, 1 MM PITCH, FBGA-165
文件頁數(shù)： 26/34頁
文件大?。?/td> 864K
代理商： GS8161EV32BD-200
GS8161EV18B(T/D)/GS8161EV32B(D)/GS8161EV36B(T/D)
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 9/2004
32/34
2004, GSI Technology
Ordering Information for GSI Synchronous Burst RAMs
Org
Part Number1
Type
Package
Speed2
(MHz/ns)
TA3 Status
1M x 18
GS8161EV18BT-250
DCD Pipeline/Flow Through
TQFP
250/5.5
C
1M x 18
GS8161EV18BT-200
DCD Pipeline/Flow Through
TQFP
200/6.5
C
1M x 18
GS8161EV18BT-150
DCD Pipeline/Flow Through
TQFP
150/7.5
C
1M x 18
GS8161EV18BGT-250
DCD Pipeline/Flow Through
Pb-Free TQFP
250/5.5
C
1M x 18
GS8161EV18BGT-200
DCD Pipeline/Flow Through
Pb-Free TQFP
200/6.5
C
1M x 18
GS8161EV18BGT-150
DCD Pipeline/Flow Through
Pb-Free TQFP
150/7.5
C
1M x 18
GS8161EV18BD-250
DCD Pipeline/Flow Through
165 BGA (var.2)
250/5.5
C
1M x 18
GS8161EV18BD-200
DCD Pipeline/Flow Through
165 BGA (var.2)
200/6.5
C
1M x 18
GS8161EV18BD-150
DCD Pipeline/Flow Through
165 BGA (var.2)
150/7.5
C
512K x 32
GS8161EV32BD-250
DCD Pipeline/Flow Through
165 BGA (var.2)
250/5.5
C
512K x 32
GS8161EV32BD-200
DCD Pipeline/Flow Through
165 BGA (var.2)
200/6.5
C
512K x 32
GS8161EV32BD-150
DCD Pipeline/Flow Through
165 BGA (var.2)
150/7.5
C
512K x 36
GS8161EV36BT-250
DCD Pipeline/Flow Through
TQFP
250/5.5
C
512K x 36
GS8161EV36BT-200
DCD Pipeline/Flow Through
TQFP
200/6.5
C
512K x 36
GS8161EV36BT-150
DCD Pipeline/Flow Through
TQFP
150/7.5
C
512K x 36
GS8161EV36BGT-250
DCD Pipeline/Flow Through
Pb-Free TQFP
250/5.5
C
512K x 36
GS8161EV36BGT-200
DCD Pipeline/Flow Through
Pb-Free TQFP
200/6.5
C
512K x 36
GS8161EV36BGT-150
DCD Pipeline/Flow Through
Pb-Free TQFP
150/7.5
C
512K x 36
GS8161EV36BD-250
DCD Pipeline/Flow Through
165 BGA (var.2)
250/5.5
C
512K x 36
GS8161EV36BD-200
DCD Pipeline/Flow Through
165 BGA (var.2)
200/6.5
C
512K x 36
GS8161EV36BD-150
DCD Pipeline/Flow Through
165 BGA (var.2)
150/7.5
C
1M x 18
GS8161EV18BT-250I
DCD Pipeline/Flow Through
TQFP
250/5.5
I
1M x 18
GS8161EV18BT-200I
DCD Pipeline/Flow Through
TQFP
200/6.5
I
1M x 18
GS8161EV18BT-150I
DCD Pipeline/Flow Through
TQFP
150/7.5
I
1M x 18
GS8161EV18BGT-250I
DCD Pipeline/Flow Through
Pb-Free TQFP
250/5.5
I
1M x 18
GS8161EV18BGT-200I
DCD Pipeline/Flow Through
Pb-Free TQFP
200/6.5
I
1M x 18
GS8161EV18BGT-150I
DCD Pipeline/Flow Through
Pb-Free TQFP
150/7.5
I
1M x 18
GS8161EV18BD-250I
DCD Pipeline/Flow Through
165 BGA (var.2)
250/5.5
I
1M x 18
GS8161EV18BD-200I
DCD Pipeline/Flow Through
165 BGA (var.2)
200/6.5
I
1M x 18
GS8161EV18BD-150I
DCD Pipeline/Flow Through
165 BGA (var.2)
150/7.5
I
512K x 32
GS8161EV32BD-250I
DCD Pipeline/Flow Through
165 BGA (var.2)
250/5.5
I
Notes:
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8161EV18BT-
150IT. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode.
Each device is Pipeline/Flow Through mode-selectable by the user.
2. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range.
3.
GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which
are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
相關(guān)PDF資料
PDF描述
GS8161Z18DGD-200IVT 1M X 18 ZBT SRAM, 6.5 ns, PBGA165
GS8161Z18DT-250IV 1M X 18 ZBT SRAM, 5.5 ns, PQFP100
GS8161Z18DT-200T 1M X 18 ZBT SRAM, 6.5 ns, PQFP100
GS816218 1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs
GS816236D-150IT 512K X 36 CACHE SRAM, 7.5 ns, PBGA165
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GS8161FZ18BD-5.5 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Flow Through Synchronous NBT SRAM
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