| 型號 | 廠商 | 描述 |
| bc461-6 2 |
PNP | |
| bc461 2 |
COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES | |
| bc460-4 2 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 2A I(C) | TO-39 | |
| bc460-5 2 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 2A I(C) | TO-39 | |
| bc460-6 2 |
PNP | |
| bc440 2 |
COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES | |
| bc441 2 |
COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES | |
| bc460 2 |
CENTRAL SEMICONDUCTOR CORP | Small Signal Transistors |
| bc461 2 |
CENTRAL SEMICONDUCTOR CORP | Small Signal Transistors |
| bc440 2 |
CENTRAL SEMICONDUCTOR CORP | Small Signal Transistors |
| bc441 2 |
CENTRAL SEMICONDUCTOR CORP | Small Signal Transistors |
| bc485 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR | |
| bc485b |
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | TO-92 | |
| bc487 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR | |
| bc487a |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | TO-92 | |
| bc489l |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-92 | |
| bc486 |
PNP SILICON PLANAR EPITAXIAL TRANSISTOR | |
| bc490 |
PNP SILICON PLANAR EPITAXIAL TRANSISTOR | |
| bc490azl1 |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92 | |
| bc490b |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92 | |
| bc490l |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92 | |
| bc488 |
PNP SILICON PLANAR EPITAXIAL TRANSISTOR | |
| bc488a |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-92 | |
| bc488b |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-92 | |
| bc488l |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-92 | |
| bc489azl1 2 3 4 5 6 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-92 | |
| bc489 2 3 4 5 6 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR | |
| bc489bzl1 2 3 4 5 6 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-92 | |
| bc489rl1 2 3 4 5 6 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-92 | |
| bc516 2 3 4 5 6 7 8 |
NXP SEMICONDUCTORS | PNP Darlington transistor(PNP達(dá)林頓晶體管) |
| bc516 |
COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTOR | |
| bc517rl1 2 3 4 5 6 |
8Gb Mass Storage - OBSOLETE | |
| bc517s 2 3 4 5 6 |
NAND Flash Memory; Density: 8Gb; Organization: 1Gbx8; Bits/Cell: MLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to +70°C; Package: 48-TSOP | |
| bc517zl1 2 3 4 5 6 |
TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | 1A I(C) | TO-92 | |
| bc517 2 3 4 5 6 |
COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTOR | |
| bc517 2 3 4 5 6 |
KEC Holdings | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR) |
| bc517 2 3 4 5 6 7 8 |
NXP SEMICONDUCTORS | NPN Darlington transistor(NPN達(dá)林頓晶體管) |
| bc527 2 |
PNP SILICON AF MEDIUM POWER TRANSISTORS | |
| bc528 2 |
PNP SILICON AF MEDIUM POWER TRANSISTORS | |
| bc537 2 |
NPN SILICON AF MEDIUM POWER TRANSISTORS | |
| bc538 2 |
NPN SILICON AF MEDIUM POWER TRANSISTORS | |
| bc546bamo 2 3 4 5 |
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 100MA I(C) | TO-92 | |
| bc546 2 3 4 5 |
NPN SILICON RF SMALL SIGNAL TRANSISTOR | |
| bc546a 2 3 4 5 |
NXP SEMICONDUCTORS | NPN general purpose transistors |
| bc546b 2 3 4 5 |
NXP SEMICONDUCTORS | NPN general purpose transistors |
| bc547camo 2 3 4 5 |
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 100MA I(C) | TO-92 | |
| bc546c 2 3 4 5 |
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 100MA I(C) | TO-92 | |
| bc546 2 3 4 5 |
MICRO COMMERCIAL COMPONENTS | NPN Silicon Amplifier Transistor 625mW |
| bc546b 2 3 4 5 |
MICRO COMMERCIAL COMPONENTS | NPN Silicon Amplifier Transistor 625mW |
| bc546 2 3 4 5 |
DIOTEC SEMICONDUCTOR AG | Si-Epitaxial PlanarTransistors |