型號(hào) 廠商 描述
bd178-6
2 3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-126
bd179-6
2 3
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-126
bd180-6
2
Transient Surge Protection Thyristor; Thyristor Type:Sidac; Package/Case:DO-214AA; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:65V; Capacitance:60pF; Forward Voltage:5V; Holding Current:120mA; Leakage Current:5uA RoHS Compliant: NA
bd176-10
2
Transient Surge Protection Thyristor; Package/Case:DO-214AA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):Yes; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:25V; Capacitance:110pF; Holding Current:50mA
bd176-6
2
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-126
bd185
2
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 4A I(C) | TO-225AA
bd189
2
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-225AA
bd187
2
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 4A I(C) | TO-126VAR
bd202-sm
2 3 4
TRANSISTOR LEISTUNGS BIPOLAR
bd202
2 3 4
NTE Electronics, Inc. Silicon Complementary Transistors General Purpose Amplifier, Switch
bd202
2 3 4
GE Security, Inc. EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS
bd204-sm
2 3 4 5 6
TRANSISTOR LEISTUNGS BIPOLAR
bd204
2 3 4 5 6
GE Security, Inc. EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS
bd212
2
Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:75V; Capacitance:100pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V
bd512
2
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:35mA; Package/Case:D-PAK; Current, It av:8A; Gate Trigger Current Max, Igt:35mA
bd55
2
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:8A; Gate Trigger Current Max, Igt:10mA
bd215
2
Analog IC
bs25
2
Glass Passivated Rectifier Diodes
bs515
2
Analog IC
bs55
2
Analog IC
rbd212
2
Analog IC
rbd215
2
Analog IC
rbd512
2
Analog IC
rbd515
2
Analog IC
rbd55
2
Analog IC
rbs212
2
Analog IC
rbs215
2
Analog IC
rbs25
2
Analog IC
rbs512
2
Analog IC
rbs515
2
Analog IC
rbs55
2
Analog IC
bd230
2 3 4 5 6 7 8
NXP SEMICONDUCTORS NPN power transistor(NPN功率晶體管)
bd231
2 3 4 5 6 7 8
NXP SEMICONDUCTORS PNP power transistor(PNP功率晶體管)
bd241
2
NPN SILCON EPITAXIAL BASE POWER TRANSISTORS
bd241b
2
NPN SILCON EPITAXIAL BASE POWER TRANSISTORS
bd241bfi
2
Transient Surge Protection Thyristor; Thyristor Type:Sidac; Leaded Process Compatible:No; Package/Case:DO-214AA; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:190V; Capacitance:30pF RoHS Compliant: No
bd241cfp
2
Transient Surge Protection Thyristor; Package/Case:MS-013; Current, It av:2.2A; Reel Quantity:1500; Capacitance:80pF; Current Rating:2.2A; Forward Current:5A; Forward Voltage:200V; Holding Current:150mA
bd241a
2
NPN SILCON EPITAXIAL BASE POWER TRANSISTORS
bd242bfi
2
Transient Surge Protection Thyristor; Thyristor Type:Sidac; Current, It av:2.2A; Package/Case:DO-214AA; Reel Quantity:2500; Capacitance:15pF; Current Rating:2.2A; Forward Current:5A; Forward Voltage:280V; Holding Current:120mA RoHS Compliant: NA
bd241bfp
2
意法半導(dǎo)體 COMPLEMENTARY SILICON POWER TRANSISTORS
bd241b
2
Boca Semiconductor Corp. RES, 10 OHM, 1%, 1/4W, 1210
bd241
2
Boca Semiconductor Corp. COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS
bd241a
2
Boca Semiconductor Corp. COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS
bd241c
2
Boca Semiconductor Corp. COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS
bd241a
2
Transys Electronics Ltd. NPN SILICON POWER TRANSISTOR
bd241b
2
Transys Electronics Ltd. NPN SILICON POWER TRANSISTOR
bd241
2
Transys Electronics Ltd. NPN SILICON POWER TRANSISTOR
bd241c
2
Transys Electronics Ltd. NPN SILICON POWER TRANSISTOR
bd241b
2
MOSPEC SEMICONDUCTOR CORP. POWER TRANSISTORS(3A,40W)
bd241
2
MOSPEC SEMICONDUCTOR CORP. POWER TRANSISTORS(3A,40W)