參數(shù)資料
型號(hào): BD204
廠商: GE Security, Inc.
英文描述: EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS
中文描述: 外延基硅NPN和PNP VERSAWATT三極管
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 273K
代理商: BD204
相關(guān)PDF資料
PDF描述
BD212 Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:75V; Capacitance:100pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V
BD512 Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:35mA; Package/Case:D-PAK; Current, It av:8A; Gate Trigger Current Max, Igt:35mA
BD55 Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:8A; Gate Trigger Current Max, Igt:10mA
BD215 Analog IC
BS25 Glass Passivated Rectifier Diodes
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