參數(shù)資料
型號(hào)： BD231
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： PNP power transistor(PNP功率晶體管)
中文描述： 1.5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126
封裝： PLASTIC, TO-126, 3 PIN
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 44K
代理商： BD231
1999 Apr 21
3
Philips Semiconductors
Product specification
PNP power transistor
BD231
THERMAL CHARACTERISTICS
Note
1.
Refer to TO-126; SOT32 standard mounting conditions.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
V
BE
decreases by about
2.3 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-mb
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
note 1
100
7
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
100
10
100
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
30 V
I
E
= 0; V
CB
=
30 V; T
j
= 125
°
C
I
C
= 0; V
EB
=
5 V
V
CE
=
2 V; see Fig.2
I
C
=
5 mA
I
C
=
150 mA
I
C
=
1 A
I
C
=
1 A; I
B
=
0.1 A
I
C
=
1 A; I
B
=
0.1 A
I
C
=
1 A; V
CE
=
2 V; note 1
I
C
=
50 mA; V
CE
=
5 V; f = 100 MHz
I
C
=
150 mA;
V
CE
=
2 V
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
40
40
25
50
1.3
250
0.8
1.1
1.3
1.6
V
CEsat
V
BEsat
V
BE
f
T
h
FE2
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter voltage
transition frequency
DC current gain ratio of the
complementary pairs
V
V
V
MHz
h
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