型號(hào): | BD241B |
英文描述: | NPN SILCON EPITAXIAL BASE POWER TRANSISTORS |
中文描述: | npn型秀康外延基地功率晶體管 |
文件頁數(shù): | 2/2頁 |
文件大小: | 97K |
代理商: | BD241B |
相關(guān)PDF資料 |
PDF描述 |
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BD241BFI | Transient Surge Protection Thyristor; Thyristor Type:Sidac; Leaded Process Compatible:No; Package/Case:DO-214AA; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:190V; Capacitance:30pF RoHS Compliant: No |
BD241CFP | Transient Surge Protection Thyristor; Package/Case:MS-013; Current, It av:2.2A; Reel Quantity:1500; Capacitance:80pF; Current Rating:2.2A; Forward Current:5A; Forward Voltage:200V; Holding Current:150mA |
BD241A | NPN SILCON EPITAXIAL BASE POWER TRANSISTORS |
BD242BFI | Transient Surge Protection Thyristor; Thyristor Type:Sidac; Current, It av:2.2A; Package/Case:DO-214AA; Reel Quantity:2500; Capacitance:15pF; Current Rating:2.2A; Forward Current:5A; Forward Voltage:280V; Holding Current:120mA RoHS Compliant: NA |
BD241BFP | COMPLEMENTARY SILICON POWER TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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BD241BFI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-220AB |
BD241BFP | 制造商:STMicroelectronics 功能描述: |
BD241BFP_01 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
BD241B-S | 功能描述:兩極晶體管 - BJT 80V 3A NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
BD241BTU | 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |