型號: | BD178-6 |
英文描述: | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-126 |
中文描述: | 晶體管|晶體管|進(jìn)步黨| 60V的五(巴西)總裁| 3A條一(c)|至126 |
文件頁數(shù): | 1/3頁 |
文件大?。?/td> | 28K |
代理商: | BD178-6 |
相關(guān)PDF資料 |
PDF描述 |
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BD179-6 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-126 |
BD180-6 | Transient Surge Protection Thyristor; Thyristor Type:Sidac; Package/Case:DO-214AA; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:65V; Capacitance:60pF; Forward Voltage:5V; Holding Current:120mA; Leakage Current:5uA RoHS Compliant: NA |
BD176-10 | Transient Surge Protection Thyristor; Package/Case:DO-214AA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):Yes; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:25V; Capacitance:110pF; Holding Current:50mA |
BD176-6 | TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-126 |
BD185 | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 4A I(C) | TO-225AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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BD179 | 功能描述:兩極晶體管 - BJT NPN Gen Purpose Sw RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
BD179 | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-126 |
BD179/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Plastic Medium Power Silicon NPN Transistor |
BD179_00 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NPN SILICON TRANSISTOR |
BD179_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NPN power transistor |