參數(shù)資料
型號: BD230
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN power transistor(NPN功率晶體管)
中文描述: 1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
封裝: PLASTIC, TO-126, 3 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 44K
代理商: BD230
1999 Apr 21
2
Philips Semiconductors
Product specification
NPN power transistor
BD230
FEATURES
High current (max. 1.5 A)
Low voltage (max. 80 V).
APPLICATIONS
Driver stages in television circuits.
DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic
package. PNP complement: BD231.
PINNING
PIN
DESCRIPTION
1
2
emitter
collector, connected to metal part of
mounting surface
base
3
Fig.1
Simplified outline (TO-126; SOT32)
and symbol.
handbook, halfpage
MAM254
1
2
3
Top view
1
2
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
65
65
100
80
5
1.5
3
1
12.5
+150
150
+150
V
V
V
A
A
A
W
°
C
°
C
°
C
T
mb
62
°
C
相關PDF資料
PDF描述
BD231 PNP power transistor(PNP功率晶體管)
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參數(shù)描述
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