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參數(shù)資料
| 型號(hào)： | BC516 |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | PNP Darlington transistor(PNP達(dá)林頓晶體管) |
| 中文描述： | 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SC-43A, 3 PIN |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大小： | 44K |
| 代理商： | BC516 |
1999 Apr 23
5
Philips Semiconductors
Product specification
PNP Darlington transistor
BC516
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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| BC516 | COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTOR |
| BC517RL1 | 8Gb Mass Storage - OBSOLETE |
| BC517S | NAND Flash Memory; Density: 8Gb; Organization: 1Gbx8; Bits/Cell: MLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to +70°C; Package: 48-TSOP |
| BC517ZL1 | TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | 1A I(C) | TO-92 |
| BC517 | COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BC516,126 | 制造商:NXP Semiconductors 功能描述:PROD.BC516 (SOT54) CFM EOL311208 |
| BC516 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR DARLINGTON TO-92 |
| BC516 | 制造商:Fairchild Semiconductor Corporation 功能描述:Darlington Bipolar Transistor Transistor |
| BC516_D27Z | 功能描述:達(dá)林頓晶體管 PNP DAR -30V -1A RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| BC516_D74Z | 功能描述:達(dá)林頓晶體管 PNP DAR -30V -1A RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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