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參數(shù)資料
| 型號(hào)： | AT32AP7002-CTUT |
| 廠商： | Atmel |
| 文件頁(yè)數(shù)： | 53/83頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC MCU 32BIT AVR32 196-CBGA |
| 產(chǎn)品培訓(xùn)模塊： | MCU Product Line Introduction |
| 標(biāo)準(zhǔn)包裝： | 945 |
| 系列： | AVR®32 AP7 |
| 核心處理器： | AVR |
| 芯體尺寸： | 32-位 |
| 速度： | 150MHz |
| 連通性： | EBI/EMI，I²C，MMC，PS2，SPI，SSC，UART/USART，USB |
| 外圍設(shè)備： | AC'97，DMA，I²S，LCD，POR，PWM，WDT |
| 輸入/輸出數(shù)： | 85 |
| 程序存儲(chǔ)器類型： | ROMless |
| RAM 容量： | 32K x 8 |
| 電壓 - 電源 (Vcc/Vdd)： | 1.65 V ~ 1.95 V |
| 數(shù)據(jù)轉(zhuǎn)換器： | D/A 2x16b |
| 振蕩器型： | 內(nèi)部 |
| 工作溫度： | -40°C ~ 85°C |
| 封裝/外殼： | 196-CBGA |
| 包裝： | 托盤 |
| 配用： | ATAVRONEKIT-ND - KIT AVR/AVR32 DEBUGGER/PROGRMMR ATNGW100-ND - KIT AVR32 NETWORK GATEWAY ATSTK1000-ND - KIT STARTER FOR AVR32AP7000 |
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2011 Microchip Technology Inc.
DS70118J-page 49
dsPIC30F2010
7.0
DATA EEPROM MEMORY
The Data EEPROM Memory is readable and writable
during normal operation over the entire VDD range. The
data EEPROM memory is directly mapped in the
program memory address space.
The four SFRs used to read and write the program
Flash memory are used to access data EEPROM
memory as well. As described in Section 6.0 “Flash
Program Memory”, these registers are:
NVMCON
NVMADR
NVMADRU
NVMKEY
The EEPROM data memory allows read and write of
single words and 16-word blocks. When interfacing to
data memory, NVMADR, in conjunction with the
NVMADRU register, is used to address the EEPROM
location
being
accessed.
TBLRDL
and
TBLWTL
instructions are used to read and write data EEPROM.
The dsPIC30F devices have up to 1 Kbyte of data
EEPROM, with an address range from 0x7FFC00 to
0x7FFFFE.
A word write operation should be preceded by an erase
of the corresponding memory location(s). The write
typically requires 2 ms to complete, but the write time
will vary with voltage and temperature.
A program or erase operation on the data EEPROM
does not stop the instruction flow. The user is respon-
sible for waiting for the appropriate duration of time
before initiating another data EEPROM write/erase
operation. Attempting to read the data EEPROM while
a programming or erase operation is in progress results
in unspecified data.
Control bit WR initiates write operations, similar to pro-
gram Flash writes. This bit cannot be cleared, only set,
in software. This bit is cleared in hardware at the com-
pletion of the write operation. The inability to clear the
WR bit in software prevents the accidental or
premature termination of a write operation.
The WREN bit, when set, will allow a write operation.
On power-up, the WREN bit is clear. The WRERR bit is
set when a write operation is interrupted by a MCLR
Reset, or a WDT Time-out Reset, during normal oper-
ation. In these situations, following Reset, the user can
check the WRERR bit and rewrite the location. The
address register NVMADR remains unchanged.
7.1
Reading the Data EEPROM
A TBLRD instruction reads a word at the current pro-
gram word address. This example uses W0 as a
pointer to data EEPROM. The result is placed in
register W4, as shown in Example 7-1.
EXAMPLE 7-1:
DATA EEPROM READ
Note:
This data sheet summarizes features of
this group of dsPIC30F devices and is not
intended to be a complete reference
source. For more information on the CPU,
peripherals,
register
descriptions
and
general device functionality, refer to the
“dsPIC30F Family Reference Manual”
(DS70046). For more information on the
device instruction set and programming,
refer to the “16-bit MCU and DSC Pro-
grammer’s
Reference
Manual”
(DS70157).
Note:
Interrupt flag bit NVMIF in the IFS0 regis-
ter is set when write is complete. It must
be cleared in software.
MOV
#LOW_ADDR_WORD,W0
; Init Pointer
MOV
#HIGH_ADDR_WORD,W1
MOV
W1,TBLPAG
TBLRDL
[ W0 ], W4
; read data EEPROM
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