參數(shù)資料
型號: AT32AP7002-CTUT
廠商: Atmel
文件頁數(shù): 50/83頁
文件大小: 0K
描述: IC MCU 32BIT AVR32 196-CBGA
產(chǎn)品培訓(xùn)模塊: MCU Product Line Introduction
標(biāo)準(zhǔn)包裝: 945
系列: AVR®32 AP7
核心處理器: AVR
芯體尺寸: 32-位
速度: 150MHz
連通性: EBI/EMI,I²C,MMC,PS2,SPI,SSC,UART/USART,USB
外圍設(shè)備: AC'97,DMA,I²S,LCD,POR,PWM,WDT
輸入/輸出數(shù): 85
程序存儲器類型: ROMless
RAM 容量: 32K x 8
電壓 - 電源 (Vcc/Vdd): 1.65 V ~ 1.95 V
數(shù)據(jù)轉(zhuǎn)換器: D/A 2x16b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 196-CBGA
包裝: 托盤
配用: ATAVRONEKIT-ND - KIT AVR/AVR32 DEBUGGER/PROGRMMR
ATNGW100-ND - KIT AVR32 NETWORK GATEWAY
ATSTK1000-ND - KIT STARTER FOR AVR32AP7000
dsPIC30F2010
DS70118J-page 46
2011 Microchip Technology Inc.
6.6.3
LOADING WRITE LATCHES
Example 6-2 shows a sequence of instructions that
can be used to load the 96 bytes of write latches. 32
TBLWTL
and 32 TBLWTH instructions are needed to
load the write latches selected by the table pointer.
EXAMPLE 6-2:
LOADING WRITE LATCHES
6.6.4
INITIATING THE PROGRAMMING
SEQUENCE
For protection, the write initiate sequence for NVMKEY
must be used to allow any erase or program operation
to proceed. After the programming command has been
executed, the user must wait for the programming time
until programming is complete. The two instructions
following the start of the programming sequence
should be NOPs.
EXAMPLE 6-3:
INITIATING A PROGRAMMING SEQUENCE
; Set up a pointer to the first program memory location to be written
; program memory selected, and writes enabled
MOV
#0x0000,W0
;
MOV
W0,TBLPAG
; Initialize PM Page Boundary SFR
MOV
#0x6000,W0
; An example program memory address
; Perform the TBLWT instructions to write the latches
; 0th_program_word
MOV
#LOW_WORD_0,W2
;
MOV
#HIGH_BYTE_0,W3
;
TBLWTL
W2,[W0]
; Write PM low word into program latch
TBLWTH
W3,[W0++]
; Write PM high byte into program latch
; 1st_program_word
MOV
#LOW_WORD_1,W2
;
MOV
#HIGH_BYTE_1,W3
;
TBLWTL
W2,[W0]
; Write PM low word into program latch
TBLWTH
W3,[W0++]
; Write PM high byte into program latch
;
2nd_program_word
MOV
#LOW_WORD_2,W2
;
MOV
#HIGH_BYTE_2,W3
;
TBLWTL
W2, [W0]
; Write PM low word into program latch
TBLWTH
W3, [W0++]
; Write PM high byte into program latch
; 31st_program_word
MOV
#LOW_WORD_31,W2
;
MOV
#HIGH_BYTE_31,W3
;
TBLWTL
W2, [W0]
; Write PM low word into program latch
TBLWTH
W3, [W0++]
; Write PM high byte into program latch
Note: In Example 6-2, the contents of the upper byte of W3 has no effect.
DISI
#5
; Block all interrupts with priority <7
; for next 5 instructions
MOV
#0x55,W0
MOV
W0,NVMKEY
; Write the 0x55 key
MOV
#0xAA,W1
;
MOV
W1,NVMKEY
; Write the 0xAA key
BSET
NVMCON,#WR
; Start the erase sequence
NOP
; Insert two NOPs after the erase
NOP
; command is asserted
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