- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381310 > AS4LC256K16EO (Alliance Semiconductor Corporation) 3.3V 256K×16 CMOS DRAM (EDO)(3.3V 256K×16 CMOS動態(tài)RAM（擴展數(shù)據(jù)總線）) PDF資料下載
參數(shù)資料
| 型號： | AS4LC256K16EO |
| 廠商： | Alliance Semiconductor Corporation |
| 英文描述： | 3.3V 256K×16 CMOS DRAM (EDO)(3.3V 256K×16 CMOS動態(tài)RAM（擴展數(shù)據(jù)總線）) |
| 中文描述： | 3.3 256K × 16的CMOS的DRAM（江戶）（3.3 256K × 16的CMOS動態(tài)隨機存儲器（擴展數(shù)據(jù)總線）） |
| 文件頁數(shù)： | 6/25頁 |
| 文件大?。?/td> | 528K |
| 代理商： | AS4LC256K16EO |
AS4LC256K16EO
2/1/01;
V.1.0
Alliance Semiconductor
P. 6 of 25
Write cycle
Read-modify-write cycle
Std Symbol Parameter
-35
-45
-60
Unit
Notes
Min
Max
Min
Max
Min
Max
t
ASC
t
CAH
t
AWR
t
WCS
t
WCH
t
WCR
t
WP
t
RWL
t
CWL
t
DS
t
DH
t
DHR
Column address setup time
0
–
0
–
0
–
ns
Column address hold time
5
–
6
–
10
–
ns
Column address hold time to
RAS
28
–
35
–
40
–
ns
Write command setup time
0
–
0
–
0
–
ns
11
Write command hold time
0
–
0
–
0
–
ns
11
Write command hold time to
RAS
28
–
35
–
40
–
ns
Write command pulse width
5
–
6
–
10
–
ns
Write command to
RAS
lead time
11
–
12
–
12
–
ns
Write command to
CAS
lead time
11
–
12
–
12
–
ns
Data-in setup time
0
–
0
–
0
–
ns
12
Data-in hold time
5
–
6
–
10
–
ns
12
Data-in hold time to
RAS
28
–
35
–
45
–
ns
Std Symbol Parameter
-35
-45
-60
Unit
Notes
Min
Max
Min
Max
Min
Max
t
RWC
t
RWD
t
CWD
t
AWD
t
RSH(W)
t
CAS(W)
Read-write cycle time
105
–
115
–
120
–
ns
RAS
to
WE
delay time
54
–
58
–
60
–
ns
11
CAS
to
WE
delay time
28
–
30
–
30
–
ns
11
Column address to
WE
delay time
35
–
38
–
40
–
ns
11
CAS
to
RAS
hold time (write)
10
–
10
–
12
–
ns
CAS
pulse width (write)
15
–
15
–
15
–
ns
相關PDF資料 |
PDF描述 |
|---|---|
| AS4LC4M16S0 | 3.3V 4M × 16 CMOS Synchronous DRAM(3.3V 4M × 16 CMOS同步動態(tài)RAM) |
| AS4LC4M16S0-75TC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC4M16S0-8TC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC8M8S0 | 3.3V 8M × 8 CMOS Synchronous DRAM(3.3V 8M × 8 CMOS同步動態(tài)RAM) |
| AS4LC4M16S0-10FTC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AS4LC256K16EO-35 | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO) |
| AS4LC256K16EO-35TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO) |
| AS4LC256K16EO-45TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO) |
| AS4LC256K16EO-60JC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO) |
| AS4LC256K16EO-60TC | 制造商:ALLIANCE 功能描述: 制造商:Alliance Memory Inc 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。