參數(shù)資料
型號(hào): AS4LC256K16EO
廠商: Alliance Semiconductor Corporation
英文描述: 3.3V 256K×16 CMOS DRAM (EDO)(3.3V 256K×16 CMOS動(dòng)態(tài)RAM(擴(kuò)展數(shù)據(jù)總線))
中文描述: 3.3 256K × 16的CMOS的DRAM(江戶)(3.3 256K × 16的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器(擴(kuò)展數(shù)據(jù)總線))
文件頁(yè)數(shù): 18/25頁(yè)
文件大?。?/td> 528K
代理商: AS4LC256K16EO
AS4LC256K16EO
2/1/01;
V.1.0
Alliance Semiconductor
P. 18 of 25
EDO page mode read-modify-write cycle waveform
CAS
-before-
RAS
refresh cycle waveform
(
WE
= A9 = V
IH
or V
IL
)
RAS
only refresh cycle waveform
(
WE
=
OE
= V
IH
or V
IL
)
t
RASP
t
RP
t
RCD
t
CSH
t
CAS
t
CP
t
CRP
t
ASR
t
CAH
t
CAH
t
RAL
t
CAH
t
CWD
t
AWD
t
CWD
t
CWL
t
WP
t
CWD
t
AWD
t
RWL
t
OEZ
t
OEA
t
RAC
t
CLZ
t
CAC
t
DS
t
CLZ
t
CAC
t
CAP
Row Ad
Col Ad
t
CWL
Col Address
Col Ad
Data Out
Data In
Data In
Data Out
Data Out
Data In
RAS
UCAS
,
LCAS
Address
WE
OE
I/O
t
RAD
t
RAH
t
RWD
t
RCS
t
OEA
t
AA
t
DH
t
DS
t
CLZ
t
CAC
t
OED
t
PCM
t
RP
t
RC
t
RAS
t
RPC
t
CPN
t
CSR
t
CHR
t
OFF
RAS
UCAS
,
LCAS
I/O
t
RAS
t
RP
t
RC
t
CRP
t
RPC
t
ARS
t
RAH
Row Address
RAS
UCAS
,
LCAS
Address
相關(guān)PDF資料
PDF描述
AS4LC4M16S0 3.3V 4M × 16 CMOS Synchronous DRAM(3.3V 4M × 16 CMOS同步動(dòng)態(tài)RAM)
AS4LC4M16S0-75TC 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
AS4LC4M16S0-8TC 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
AS4LC8M8S0 3.3V 8M × 8 CMOS Synchronous DRAM(3.3V 8M × 8 CMOS同步動(dòng)態(tài)RAM)
AS4LC4M16S0-10FTC 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AS4LC256K16EO-35 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO)
AS4LC256K16EO-35TC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO)
AS4LC256K16EO-45TC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO)
AS4LC256K16EO-60JC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO)
AS4LC256K16EO-60TC 制造商:ALLIANCE 功能描述: 制造商:Alliance Memory Inc 功能描述: