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參數(shù)資料
| 型號： | AS4LC256K16EO |
| 廠商： | Alliance Semiconductor Corporation |
| 英文描述： | 3.3V 256K×16 CMOS DRAM (EDO)(3.3V 256K×16 CMOS動態(tài)RAM（擴展數(shù)據(jù)總線）) |
| 中文描述： | 3.3 256K × 16的CMOS的DRAM（江戶）（3.3 256K × 16的CMOS動態(tài)隨機存儲器（擴展數(shù)據(jù)總線）） |
| 文件頁數(shù)： | 5/25頁 |
| 文件大小： | 528K |
| 代理商： | AS4LC256K16EO |
AS4LC256K16EO
2/1/01;
V.1.0
Alliance Semiconductor
P. 5 of 25
AC parameters common to all waveforms
Read cycle
Std Symbol Parameter
-35
-45
-60
Unit
Notes
Min
Max
Min
Max
Min
Max
t
RC
t
RP
t
RAS
t
CAS
t
RCD
t
RAD
t
RSH(R)
t
CSH
t
CRP
t
ASR
t
RAH
t
T
t
REF
t
CLZ
Random read or write cycle time
50
–
80
–
100
–
ns
RAS
precharge time
15
–
20
–
20
–
ns
RAS
pulse width
35
75K
45
75K
60
75K
ns
CAS
pulse width
6
–
10
–
10
–
ns
RAS
to
CAS
delay time
12
18
18
32
15
45
ns
6
RAS
to column address delay time
8
14
13
23
15
30
ns
7
CAS
to
RAS
hold time (read cycle)
10
–
10
–
12
–
ns
RAS
to
CAS
hold time
35
–
45
–
60
–
ns
CAS
to
RAS
precharge time
5
–
5
–
5
–
ns
Row address setup time
0
–
0
–
0
–
ns
Row address hold time
6
–
8
–
9
–
ns
Transition time (rise and fall)
1.5
50
1.5
50
1.5
50
ns
4,5
Refresh period
–
8
–
8
–
8
ms
3
CAS
to output in low Z
0
–
3
–
3
–
ns
8
Std Symbol
Parameter
-35
-45
-60
Unit
Notes
Min
Max
Min
Max
Min
Max
t
RAC
t
CAC
t
AA
t
AR(R)
t
RCS
t
RCH
Access time from
RAS
–
35
–
45
–
60
ns
Access time from
CAS
–
7
–
10
–
10
ns
6,13
Access time from address
–
17
–
22
–
30
ns
7,13
Column add hold from
RAS
28
–
35
–
40
–
ns
Read command setup time
0
–
0
–
0
–
ns
Read command hold time to
CAS
0
–
0
–
0
–
ns
9
tRRH
t
RAL
t
CPN
t
OFF
Read command hold time to
RAS
0
–
0
–
0
–
ns
9
Column address to
RAS
Lead time
18
–
25
–
30
–
ns
CAS
precharge time
4
–
5
–
5
–
ns
Output buffer turn-off time
0
8
0
10
0
10
ns
8,10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS4LC4M16S0 | 3.3V 4M × 16 CMOS Synchronous DRAM(3.3V 4M × 16 CMOS同步動態(tài)RAM) |
| AS4LC4M16S0-75TC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC4M16S0-8TC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC8M8S0 | 3.3V 8M × 8 CMOS Synchronous DRAM(3.3V 8M × 8 CMOS同步動態(tài)RAM) |
| AS4LC4M16S0-10FTC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS4LC256K16EO-35 | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO) |
| AS4LC256K16EO-35TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO) |
| AS4LC256K16EO-45TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO) |
| AS4LC256K16EO-60JC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO) |
| AS4LC256K16EO-60TC | 制造商:ALLIANCE 功能描述: 制造商:Alliance Memory Inc 功能描述: |
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