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參數(shù)資料
| 型號： | AS4LC256K16EO |
| 廠商： | Alliance Semiconductor Corporation |
| 英文描述： | 3.3V 256K×16 CMOS DRAM (EDO)(3.3V 256K×16 CMOS動態(tài)RAM（擴展數(shù)據(jù)總線）) |
| 中文描述： | 3.3 256K × 16的CMOS的DRAM（江戶）（3.3 256K × 16的CMOS動態(tài)隨機存儲器（擴展數(shù)據(jù)總線）） |
| 文件頁數(shù)： | 3/25頁 |
| 文件大?。?/td> | 528K |
| 代理商： | AS4LC256K16EO |
AS4LC256K16EO
2/1/01;
V.1.0
Alliance Semiconductor
P. 3 of 25
Absolute maximum ratings
NOTE:
Stresses greater than those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to abso-
lute maximum rating conditions for extended periods may affect reliability.
DC electrical characteristics
Parameter
Symbol
Min
Max
Unit
Input voltage
V
in
V
out
V
CC
T
OPR
T
STG
T
SOLDER
P
D
I
out
-1.0
+7.0
V
Output voltage
-1.0
+7.0
V
Power supply voltage
-1.0
+7.0
V
Operating temperature
0
+70
°C
Storage temperature (plastic)
Soldering temperature
×
time
Power dissipation
-55
+150
260
×
10
1
°C
o
C
×
sec
W
–
–
Short circuit output current
–
50
mA
Latch-up current
200
–
mA
Parameter
Symbol
Test conditions
0V
≤
V
in
≤
+5.5V
pins not under test = 0V
-35
-45
-60
Unit
Note
Min
Max
Min
Max
Min
Max
Input leakage
current
I
IL
-10
10
-10
10
-10
10
μ
A
Output leakage
current
I
OL
D
OUT
disabled,
0V
≤
V
out
≤
+5.5V
RAS
,
UCAS
,
LCAS
, address cycling;
t
RC
=min
-10
10
-10
10
-10
10
μ
A
Operating power
supply current
I
CC1
–
70
–
60
–
50
mA
1,2
TTL standby power
supply current
I
CC2
RAS
=
UCAS
=
LCAS
= V
IH
–
200
–
200
–
200
μ
A
Average power
supply current,
RAS
refresh mode
I
CC3
RAS
cycling,
UCAS
=
LCAS
= V
IH
,
t
RC
= min
–
50
–
45
–
40
mA
1
EDO page mode
average power
supply current
I
CC4
RAS
=
UCAS
=
LCAS
=V
IL
,
address cycling: t
SC
= min
–
40
–
35
–
35
mA
1,2
CMOS standby
power supply
current
I
CC5
RAS
=
UCAS
=
LCAS
= V
CC
- 0.2V
–
400
–
400
–
400
μ
A
CAS
-before-
RAS
refresh power
supply current
I
CC6
RAS
,
UCAS,
LCAS
, cycling;
t
RC
= min
–
50
–
50
–
50
mA
1
Output Voltage
V
OH
V
OL
I
OUT
= -2 mA
I
OUT
= 2 mA
RAS = UCAS = LCAS=V
IL
,
WE = OE = A0-A8 = V
CC
-0.2V
DQ0-DQ15 = V
CC
-0.2V
0.2V are open
2.4
–
2.4
–
2.4
–
V
–
0.4
–
0.4
–
0.4
V
Self refresh current
I
CC7
-
400
-
400
-
400
μ
A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS4LC256K16EO-35 | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO) |
| AS4LC256K16EO-35TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO) |
| AS4LC256K16EO-45TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO) |
| AS4LC256K16EO-60JC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO) |
| AS4LC256K16EO-60TC | 制造商:ALLIANCE 功能描述: 制造商:Alliance Memory Inc 功能描述: |
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