參數(shù)資料
型號(hào)： AS4LC256K16EO
廠商： Alliance Semiconductor Corporation
英文描述： 3.3V 256K×16 CMOS DRAM (EDO)(3.3V 256K×16 CMOS動(dòng)態(tài)RAM（擴(kuò)展數(shù)據(jù)總線）)
中文描述： 3.3 256K × 16的CMOS的DRAM（江戶）（3.3 256K × 16的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器（擴(kuò)展數(shù)據(jù)總線））
文件頁(yè)數(shù)： 1/25頁(yè)
文件大小： 528K
代理商： AS4LC256K16EO
Copyright Alliance Semiconductor. All rights reserved.
AS4LC256K16EO
2/1/01;
V.1.0
Alliance Semiconductor
P. 1 of 25
3.3V 256K X 16 CMOS DRAM (EDO)
Features
Organization: 262,144 words × 16 bits
High speed
- 45/60 ns RAS access time
- 10/12/15/20 ns column address access time
- 7/10/10 ns CAS access time
Low power consumption
- Active: 280 mW max (AS4LC256K16EO-35)
- Standby: 2.8 mW max, CMOS I/O (AS4LC256K16EO-
35)
EDO page mode
5V I/O tolerant
512 refresh cycles, 8 ms refresh interval
- RAS-only or CAS-before-RAS refresh or self refresh
Read-modify-write
LVTTL-compatible, three-state I/O
JEDEC standard packages
- 400 mil, 40-pin SOJ
- 400 mil, 40/44-pin TSOP II
3.3V power supply
Latch-up current > 200 mA
Pin arrangement
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
GND
SOJ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Vcc
I/O0
I/O1
I/O2
I/O3
Vcc
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
A0
A1
A2
A3
Vcc
V
CC
I/O0
I/O1
I/O2
I/O3
V
CC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
A0
A1
A2
A3
V
CC
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
GND
44
43
42
41
40
39
38
37
36
35
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
13
14
15
16
17
18
19
20
21
22
TSOP II
A
A
Pin designation
Pin(s)
Description
A0 to A8
Address inputs
RAS
Row address strobe
I/O0 to I/O15
Input/output
OE
Output enable
UCAS
Column address strobe, upper byte
LCAS
Column address strobe, lower byte
WE
Read/write control
Power (3.3V
±
0.3V)
Ground
V
CC
GND
Selection guide
Symbol
AS4LC256K16EO-35
AS4LC256K16EO-45
AS4LC256K16EO-60
Unit
Maximum
RAS
access time
t
RAC
t
CAA
t
CAC
t
OEA
t
RC
t
PC
I
CC1
I
CC2
35
45
60
ns
Maximum column address access time
17
20
25
ns
Maximum
CAS
access time
7
10
10
ns
Maximum output enable (
OE
) access time
7
10
10
ns
Minimum read or write cycle time
50
80
100
ns
Minimum EDO page mode cycle time
15
17
30
ns
Maximum operating current
70
60
50
mA
Maximum CMOS standby current
200
200
200
μA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AS4LC256K16EO-35 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO)
AS4LC256K16EO-35TC 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO)
AS4LC256K16EO-45TC 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO)
AS4LC256K16EO-60JC 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO)
AS4LC256K16EO-60TC 制造商:ALLIANCE 功能描述: 制造商:Alliance Memory Inc 功能描述:
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