參數(shù)資料
型號(hào): AS4LC1M16E5
廠商: Alliance Semiconductor Corporation
英文描述: 3V 1M×16 CMOS DRAM (EDO)(3V 1M×16 CMOS動(dòng)態(tài)RAM(擴(kuò)展數(shù)據(jù)總線))
中文描述: 3V的100萬× 16個(gè)CMOS的DRAM(江戶)(3V的100萬× 16個(gè)CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器(擴(kuò)展數(shù)據(jù)總線))
文件頁數(shù): 3/22頁
文件大?。?/td> 577K
代理商: AS4LC1M16E5
AS4LC1M16E5
12/15/00
Alliance Semiconductor
3
Absolute maximum ratings
Parameter
Input voltage
Power supply voltage
Storage temperature (plastic)
Soldering temperature
×
time
Power dissipation
Short circuit output current
Truth table
Symbol
V
DQ
V
CC
T
STG
T
SOLDER
P
D
I
out
Min
-1.0
-1.0
-65
Max
+5.5
+4.0
+150
260
×
10
0.6
50
Unit
V
V
°
C
o
C
×
sec
W
mA
Operation
Standby
Word read
Lower byte
read
Upper byte
read
Word
(early) write
Lower byte
(early) write
Upper byte
(early) write
Read write
RAS
H
L
LCAS
H to X
L
UCAS
H to X
L
WE
X
H
OE
X
L
Addresses
t
R
X
ROW
DQ0 to DQ15
High-Z
Data out
Lower byte,
Upper byte, Data out
Lower byte,
Data out, Upper byte
Notes
t
C
X
COL
L
L
H
H
L
ROW
COL
L
H
L
H
L
ROW
COL
L
L
L
L
X
ROW
COL
Data in
L
L
H
L
X
ROW
COL
Lower byte, Data in,
Upper byte, High-Z
Lower byte, High-Z,
Upper byte, Data in
Data out, Data in
Data out
Data out
Data out
Data in
Data in
Data out, Data in
Data out, Data in
L
H
L
L
X
ROW
COL
L
L
L
L
L
L
L
L
L
L
H to L
H
H
H
L
L
H to L
H to L
L to H
L
L
L
X
X
L to H
L to H
ROW
ROW
n/a
n/a
ROW
n/a
ROW
n/a
COL
COL
COL
n/a
COL
COL
COL
COL
1,2
2
2
2
1
1
1,2
1,2
EDO read
1st cycle
2nd cycle
Any cycle
1st cycle
2nd cycle
1st cycle
2nd cycle
H to L
H to L
L to H
H to L
H to L
H to L
H to L
H to L
H to L
L to H
H to L
H to L
H to L
H to L
EDO write
EDO
read write
RAS only
refresh
CBR refresh
Self refresh
L
H
H
X
X
ROW
n/a
High Z
H to L
H to L
L
L
L
L
H
H
X
X
X
X
X
X
High Z
High Z
3
3
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