參數(shù)資料
型號(hào)： W9812G6JH-6
廠商： WINBOND ELECTRONICS CORP
元件分類： DRAM
英文描述： 8M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
封裝： 0.400 INCH, ROHS COMPLIANT,TSOP2-54
文件頁(yè)數(shù)： 41/42頁(yè)
文件大?。?/td> 656K
代理商： W9812G6JH-6
W9812G6JH
Publication Release Date: Sep. 08, 2010
- 8 -
Revision A04
7.5 Burst Read Command
The Burst Read command is initiated by applying logic low level to CS and CAS while holding
RAS
and WE high at the rising edge of the clock. The address inputs determine the starting column
address for the burst. The Mode Register sets type of burst (sequential or interleave) and the burst
length (1, 2, 4, 8, full page) during the Mode Register Set Up cycle. Table 2 and 3 in the next page
explain the address sequence of interleave mode and sequential mode.
7.6 Burst Write Command
The Burst Write command is initiated by applying logic low level to CS , CAS and WE while
holding RAS high at the rising edge of the clock. The address inputs determine the starting column
address. Data for the first burst write cycle must be applied on the DQ pins on the same clock cycle
that the Write Command is issued. The remaining data inputs must be supplied on each subsequent
rising clock edge until the burst length is completed. Data supplied to the DQ pins after burst finishes
will be ignored.
7.7 Read Interrupted by a Read
A Burst Read may be interrupted by another Read Command. When the previous burst is interrupted,
the remaining addresses are overridden by the new read address with the full burst length. The data
from the first Read Command continues to appear on the outputs until the CAS Latency from the
interrupting Read Command the is satisfied.
7.8 Read Interrupted by a Write
To interrupt a burst read with a Write Command, DQM may be needed to place the DQs (output
drivers) in a high impedance state to avoid data contention on the DQ bus. If a Read Command will
issue data on the first and second clocks cycles of the write operation, DQM is needed to insure the
DQs are tri-stated. After that point the Write Command will have control of the DQ bus and DQM
masking is no longer needed.
7.9 Write Interrupted by a Write
A burst write may be interrupted before completion of the burst by another Write Command. When the
previous burst is interrupted, the remaining addresses are overridden by the new address and data
will be written into the device until the programmed burst length is satisfied.
7.10 Write Interrupted by a Read
A Read Command will interrupt a burst write operation on the same clock cycle that the Read
Command is activated. The DQs must be in the high impedance state at least one cycle before the
new read data appears on the outputs to avoid data contention. When the Read Command is
activated, any residual data from the burst write cycle will be ignored.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W9812G6JH-6I 功能描述:IC SDRAM 128MBIT 54TSOPII RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
W9812G6JH-75 制造商:Winbond Electronics Corp 功能描述:8*16 SDRAM
W981616AH 制造商:WINBOND 制造商全稱:Winbond 功能描述:512K x 2 BANKS x 16 BIT SDRAM
W981616AH-6 制造商:WINBOND 制造商全稱:Winbond 功能描述:x16 SDRAM
W981616AH-7 制造商:WINBOND 制造商全稱:Winbond 功能描述:x16 SDRAM
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