參數(shù)資料
型號： W9812G6JH-6
廠商： WINBOND ELECTRONICS CORP
元件分類： DRAM
英文描述： 8M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
封裝： 0.400 INCH, ROHS COMPLIANT,TSOP2-54
文件頁數(shù)： 12/42頁
文件大小： 656K
代理商： W9812G6JH-6
W9812G6JH
Publication Release Date: Sep. 08, 2010
- 2 -
Revision A04
9.3
Capacitance ...................................................................................................................... 13
9.4
DC Characteristics ............................................................................................................ 14
9.5
AC Characteristics and Operating Condition .................................................................... 15
10. TIMING WAVEFORMS.................................................................................................................. 17
10.1
Command Input Timing..................................................................................................... 17
10.2
Read Timing...................................................................................................................... 18
10.3
Control Timing of Input/Output Data ................................................................................. 19
10.4
Mode Register Set Cycle .................................................................................................. 20
11. OPERATING TIMING EXAMPLE.................................................................................................. 21
11.1
Interleaved Bank Read (Burst Length = 4, CAS Latency = 3) .......................................... 21
11.2
Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto-precharge) ............... 22
11.3
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3) .......................................... 23
11.4
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto-precharge) ............... 24
11.5
Interleaved Bank Write (Burst Length = 8) ....................................................................... 25
11.6
Interleaved Bank Write (Burst Length = 8, Auto-precharge) ............................................ 26
11.7
Page Mode Read (Burst Length = 4, CAS Latency = 3)................................................... 27
11.8
Page Mode Read / Write (Burst Length = 8, CAS Latency = 3) ....................................... 28
11.9
Auto Precharge Read (Burst Length = 4, CAS Latency = 3) ............................................ 29
11.10 Auto Precharge Write (Burst Length = 4) ......................................................................... 30
11.11 Auto Refresh Cycle ........................................................................................................... 31
11.12 Self Refresh Cycle ............................................................................................................ 32
11.13 Burst Read and Single Write (Burst Length = 4, CAS Latency = 3) ................................. 33
11.14 Power Down Mode............................................................................................................ 34
11.15 Auto-precharge Timing (Read Cycle) ............................................................................... 35
11.16 Auto-precharge Timing (Write Cycle) ............................................................................... 36
11.17 Timing Chart of Read to Write Cycle ................................................................................ 37
11.18 Timing Chart of Write to Read Cycle ................................................................................ 37
11.19 Timing Chart of Burst Stop Cycle (Burst Stop Command) ............................................... 38
11.20 Timing Chart of Burst Stop Cycle (Precharge Command)................................................ 38
11.21 CKE/DQM Input Timing (Write Cycle) .............................................................................. 39
11.22 CKE/DQM Input Timing (Read Cycle) .............................................................................. 40
12. PACKAGE SPECIFICATION......................................................................................................... 41
12.1
54L TSOP (II)-400 mil ....................................................................................................... 41
13. REVISION HISTORY..................................................................................................................... 42
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W9812G6JH-6I 功能描述:IC SDRAM 128MBIT 54TSOPII RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
W9812G6JH-75 制造商:Winbond Electronics Corp 功能描述:8*16 SDRAM
W981616AH 制造商:WINBOND 制造商全稱:Winbond 功能描述:512K x 2 BANKS x 16 BIT SDRAM
W981616AH-6 制造商:WINBOND 制造商全稱:Winbond 功能描述:x16 SDRAM
W981616AH-7 制造商:WINBOND 制造商全稱:Winbond 功能描述:x16 SDRAM
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