參數(shù)資料
型號(hào)： W9812G6JH-6
廠商： WINBOND ELECTRONICS CORP
元件分類： DRAM
英文描述： 8M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
封裝： 0.400 INCH, ROHS COMPLIANT,TSOP2-54
文件頁(yè)數(shù)： 38/42頁(yè)
文件大?。?/td> 656K
代理商： W9812G6JH-6
W9812G6JH
Publication Release Date: Sep. 08, 2010
- 5 -
Revision A04
5. PIN DESCRIPTION
PIN NUMBER PIN NAME
FUNCTION
DESCRIPTION
23
26, 22,
29
35
A0
A11
Address
Multiplexed pins for row and column address.
Row address: A0
A11. Column address: A0 A8.
20, 21
BS0, BS1
Bank Select
Select bank to activate during row address latch time,
or bank to read/write during address latch time.
2, 4, 5, 7, 8,
10, 11, 13, 42,
44, 45, 47, 48,
50, 51, 53
DQ0
DQ15
Data Input/
Output
Multiplexed pins for data output and input.
19
CS
Chip Select
Disable or enable the command decoder. When
command decoder is disabled, new command is
ignored and previous operation continues.
18
RAS
Row Address
Strobe
Command input. When sampled at the rising edge of
the clock, RAS , CAS and WE define the
operation to be executed.
17
CAS
Column Address
Strobe
Referred to RAS
16
WE
Write Enable
Referred to RAS
39, 15
UDQM/
LDQM
Input/Output
Mask
The output buffer is placed at Hi-Z (with latency of 2)
when DQM is sampled high in read cycle. In write
cycle, sampling DQM high will block the write
operation with zero latency.
38
CLK
Clock Inputs
System clock used to sample inputs on the rising edge
of clock.
37
CKE
Clock Enable
CKE controls the clock activation and deactivation.
When CKE is low, Power Down mode, Suspend mode
or Self Refresh mode is entered.
1, 14, 27
VDD
Power (+3.3V)
Power for input buffers and logic circuit inside DRAM.
28, 41, 54
VSS
Ground
Ground for input buffers and logic circuit inside DRAM.
3, 9, 43, 49
VDDQ
Power (+3.3V)
for I/O Buffer
Separated power from VDD, used for output buffers to
improve noise.
6, 12, 46, 52
VSSQ
Ground for I/O
Buffer
Separated ground from VSS, used for output buffers to
improve noise.
36, 40
NC
No Connection No connection
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W9812G6JH-6I 功能描述:IC SDRAM 128MBIT 54TSOPII RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
W9812G6JH-75 制造商:Winbond Electronics Corp 功能描述:8*16 SDRAM
W981616AH 制造商:WINBOND 制造商全稱:Winbond 功能描述:512K x 2 BANKS x 16 BIT SDRAM
W981616AH-6 制造商:WINBOND 制造商全稱:Winbond 功能描述:x16 SDRAM
W981616AH-7 制造商:WINBOND 制造商全稱:Winbond 功能描述:x16 SDRAM
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