參數(shù)資料
型號(hào)： W971GG6IB-25
廠商： WINBOND ELECTRONICS CORP
元件分類： DRAM
英文描述： 32M X 16 DDR DRAM, 0.4 ns, PBGA84
封裝： 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84
文件頁(yè)數(shù)： 51/86頁(yè)
文件大?。?/td> 1360K
代理商： W971GG6IB-25
W971GG6IB
Publication Release Date: Oct. 23, 2009
- 55 -
Revision A02
43. tIS and tIH (input setup and hold) derating.
tIS/tIH derating values for DDR2-667, DDR2-800 and DDR2-1066
ΔtIS and ΔtIH Derating Values for DDR2-667, DDR2-800 and DDR2-1066
CLK/ CLK Differential Slew Rate
2.0 V/nS
1.5 V/nS
1.0 V/nS
Command/
Address
Slew Rate
(V/nS)
ΔtIS
ΔtIH
ΔtIS
ΔtIH
ΔtIS
ΔtIH
Unit
4.0
+150
+94
+180
+124
+210
+154
pS
3.5
+143
+89
+173
+119
+203
+149
pS
3.0
+133
+83
+163
+113
+193
+143
pS
2.5
+120
+75
+150
+105
+180
+135
pS
2.0
+100
+45
+130
+75
+160
+105
pS
1.5
+67
+21
+97
+51
+127
+81
pS
1.0
0
+30
+60
pS
0.9
-5
-14
+25
+16
+55
+46
pS
0.8
-13
-31
+17
-1
+47
+29
pS
0.7
-22
-54
+8
-24
+38
+6
pS
0.6
-34
-83
-4
-53
+26
-23
pS
0.5
-60
-125
-30
-95
0
-65
pS
0.4
-100
-188
-70
-158
-40
-128
pS
0.3
-168
-292
-138
-262
-108
-232
pS
0.25
-200
-375
-170
-345
-140
-315
pS
0.2
-325
-500
-295
-470
-265
-440
pS
0.15
-517
-708
-487
-678
-457
-648
pS
0.1
-1000
-1125
-970
-1095
-940
-1065
pS
For all input signals the total tIS (setup time) and tIH (hold time) required is calculated by adding the data sheet tIS(base) and
tIH(base) value to the ΔtIS and ΔtIH derating value respectively. Example: tIS (total setup time) = tIS(base) + ΔtIS.
Setup (tIS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF(dc) and the first
crossing of VIH(ac)min. Setup (tIS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of
VREF(dc) and the first crossing of VIL(ac)max. If the actual signal is always earlier than the nominal slew rate line between
shaded ‘VREF(dc) to AC region’, use nominal slew rate for derating value. See Figure 20 Illustration of nominal slew rate for tIS.
If the actual signal is later than the nominal slew rate line anywhere between shaded ‘VREF(dc) to AC region’, the slew rate of a
tangent line to the actual signal from the AC level to DC level is used for derating value. See Figure 21 Illustration of tangent line
for tIS.
Hold (tIH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(dc)max and the first
crossing of VREF(dc). Hold (tIH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of
VIH(dc)min and the first crossing of VREF(dc). If the actual signal is always later than the nominal slew rate line between
shaded ‘DC to VREF(dc) region’, use nominal slew rate for derating value. See Figure 22 Illustration of nominal slew rate for tIH.
If the actual signal is earlier than the nominal slew rate line anywhere between shaded ‘DC to VREF(dc) region’, the slew rate of
a tangent line to the actual signal from the DC level to VREF(dc) level is used for derating value. See Figure 23 Illustration of
tangent line for tIH.
Although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached VIH/IL(ac) at
the time of the rising clock transition) a valid input signal is still required to complete the transition and reach VIH/IL(ac).
For slew rates in between the values listed in above tIS/tIH derating values for DDR2-667, DDR2-800 and DDR2-1066 table, the
derating values may obtained by linear interpolation.
These values are typically not subject to production test. They are verified by design and characterization.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W971GG6JB 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M ? 8 BANKS ? 16 BIT DDR2 SDRAM
W971GG6JB-18 制造商:Winbond Electronics Corp 功能描述:1GB DDR2 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 1GBIT 1.875NS
W971GG6JB-25 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin WBGA 制造商:Winbond Electronics 功能描述:64MBX16 DDR2 制造商:Winbond 功能描述:DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin WBGA
W971GG6JB25I 功能描述:IC DDR2 SDRAM 1GBIT 84WBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR
W971GG6JB-25I 制造商:Winbond Electronics 功能描述:-40~85 1GB DDR2 FOR INDUSTRY
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