參數(shù)資料
型號(hào)： W971GG6IB-25
廠商： WINBOND ELECTRONICS CORP
元件分類： DRAM
英文描述： 32M X 16 DDR DRAM, 0.4 ns, PBGA84
封裝： 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84
文件頁(yè)數(shù)： 35/86頁(yè)
文件大?。?/td> 1360K
代理商： W971GG6IB-25
W971GG6IB
Publication Release Date: Oct. 23, 2009
- 40 -
Revision A02
9.9
DC Characteristics
9.9.1
DC Characteristics for -18/-25/-3 speed grades
18
25
3
SYM.
CONDITIONS
MAX.
UNIT
NOTES
IDD0
Operating Current - One Bank Active-Precharge
tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD);
CKE is HIGH, CS is HIGH between valid commands;
Address and control inputs are SWITCHING;
Databus inputs are SWITCHING.
130
115
110
mA
1,2,3,4,5,
6
IDD1
Operating Current - One Bank Active-Read-
Precharge
IOUT = 0 mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD), tRCD
= tRCD(IDD);
CKE is HIGH, CS is HIGH between valid commands;
Address and control inputs are SWITCHING;
Data bus inputs are SWITCHING.
155
140
135
mA
1,2,3,4,5,
6
IDD2P
Precharge Power-Down Current
All banks idle;
tCK = tCK(IDD);
CKE is LOW;
Other control and address inputs are STABLE;
Data Bus inputs are FLOATING.
10
mA
1,2,3,4,5,
6
IDD2N
Precharge Standby Current
All banks idle;
tCK = tCK(IDD);
CKE is HIGH, CS is HIGH;
Other control and address inputs are SWITCHING;
Data bus inputs are SWITCHING.
75
60
55
mA
1,2,3,4,5,
6
IDD2Q
Precharge Quiet Standby Current
All banks idle;
tCK = tCK(IDD);
CKE is HIGH, CS is HIGH;
Other control and address inputs are STABLE;
Data bus inputs are FLOATING.
60
50
45
mA
1,2,3,4,5,
6
IDD3PF
Fast PDN Exit
MRS(12) = 0
40
35
30
IDD3PS
Active Power-Down Current
All banks open;
tCK = tCK(IDD);
CKE is LOW;
Other control and address inputs are
STABLE;
Data bus inputs are FLOATING.
Slow PDN Exit
MRS(12) = 1
15
mA
1,2,3,4,5,
6
IDD3N
Active Standby Current
All banks open;
tCK = tCK(IDD); tRAS = tRASmax(IDD), tRP = tRP(IDD);
CKE is HIGH, CS is HIGH between valid commands;
Other control and address inputs are SWITCHING;
Data bus inputs are SWITCHING.
85
70
65
mA
1,2,3,4,5,
6
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W971GG6JB 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M ? 8 BANKS ? 16 BIT DDR2 SDRAM
W971GG6JB-18 制造商:Winbond Electronics Corp 功能描述:1GB DDR2 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 1GBIT 1.875NS
W971GG6JB-25 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin WBGA 制造商:Winbond Electronics 功能描述:64MBX16 DDR2 制造商:Winbond 功能描述:DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin WBGA
W971GG6JB25I 功能描述:IC DDR2 SDRAM 1GBIT 84WBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR
W971GG6JB-25I 制造商:Winbond Electronics 功能描述:-40~85 1GB DDR2 FOR INDUSTRY
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