參數(shù)資料
型號： W971GG6IB-25
廠商： WINBOND ELECTRONICS CORP
元件分類： DRAM
英文描述： 32M X 16 DDR DRAM, 0.4 ns, PBGA84
封裝： 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84
文件頁數(shù)： 12/86頁
文件大小： 1360K
代理商： W971GG6IB-25
W971GG6IB
Publication Release Date: Oct. 23, 2009
- 2 -
Revision A02
7.4.2
Burst mode operation.......................................................................................................24
7.4.3
Burst read mode operation...............................................................................................25
7.4.4
Burst write mode operation ..............................................................................................25
7.4.5
Write data mask ...............................................................................................................26
7.5
Burst Interrupt .....................................................................................................................................26
7.6
Precharge operation............................................................................................................................27
7.6.1
Burst read operation followed by precharge.....................................................................27
7.6.2
Burst write operation followed by precharge ....................................................................27
7.7
Auto-precharge operation ...................................................................................................................27
7.7.1
Burst read with Auto-precharge........................................................................................28
7.7.2
Burst write with Auto-precharge .......................................................................................28
7.8
Refresh Operation...............................................................................................................................29
7.9
Power Down Mode..............................................................................................................................29
7.9.1
Power Down Entry ...........................................................................................................30
7.9.2
Power Down Exit..............................................................................................................30
7.10
Input clock frequency change during precharge power down .............................................................30
8.
OPERATION MODE ...........................................................................................................................31
8.1
Command Truth Table ........................................................................................................................31
8.2
Clock Enable (CKE) Truth Table for Synchronous Transitions............................................................32
8.3
Data Mask (DM) Truth Table...............................................................................................................32
8.4
Function Truth Table ...........................................................................................................................33
8.5
Simplified Stated Diagram...................................................................................................................36
9.
ELECTRICAL CHARACTERISTICS ...................................................................................................37
9.1
Absolute Maximum Ratings.................................................................................................................37
9.2
Operating Temperature Condition.......................................................................................................37
9.3
Recommended DC Operating Conditions ...........................................................................................37
9.4
ODT DC Electrical Characteristics ......................................................................................................38
9.5
Input DC Logic Level...........................................................................................................................38
9.6
Input AC Logic Level ...........................................................................................................................38
9.7
Capacitance ........................................................................................................................................39
9.8
Leakage and Output Buffer Characteristics ........................................................................................39
9.9
DC Characteristics ..............................................................................................................................40
9.9.1
DC Characteristics for -18/-25/-3 speed grades ...............................................................40
9.10
IDD Measurement Test Parameters....................................................................................................42
9.11
AC Characteristics ..............................................................................................................................43
9.11.1
AC Characteristics and Operating Condition for -18 speed grade ...................................43
9.11.2
AC Characteristics and Operating Condition for -25/-3 speed grade ...............................45
9.12
AC Input Test Conditions ....................................................................................................................65
9.13
Differential Input/Output AC Logic Levels ...........................................................................................65
9.14
AC Overshoot / Undershoot Specification...........................................................................................66
9.14.1
AC Overshoot / Undershoot Specification for Address and Control Pins: ........................66
9.14.2
AC Overshoot / Undershoot Specification for Clock, Data, Strobe and Mask pins:..........66
10.
TIMING WAVEFORMS .......................................................................................................................67
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W971GG6JB 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M ? 8 BANKS ? 16 BIT DDR2 SDRAM
W971GG6JB-18 制造商:Winbond Electronics Corp 功能描述:1GB DDR2 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 1GBIT 1.875NS
W971GG6JB-25 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin WBGA 制造商:Winbond Electronics 功能描述:64MBX16 DDR2 制造商:Winbond 功能描述:DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin WBGA
W971GG6JB25I 功能描述:IC DDR2 SDRAM 1GBIT 84WBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR
W971GG6JB-25I 制造商:Winbond Electronics 功能描述:-40~85 1GB DDR2 FOR INDUSTRY
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