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參數(shù)資料
| 型號(hào)： | W3E32M64S-200SBI |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | DRAM |
| 英文描述： | 32M X 64 DDR DRAM, 0.8 ns, PBGA208 |
| 封裝： | 13 X 22 MM, PLASTIC, BGA-208 |
| 文件頁(yè)數(shù)： | 9/18頁(yè) |
| 文件大?。?/td> | 648K |
| 代理商： | W3E32M64S-200SBI |
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White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3E32M64S-XSBX
January 2008
Rev. 6
Document Title
32M x 64 DDR SDRAM Multi-Chip Package
Revision History
Rev #
History
Release Date
Status
Rev 0
Initial Release
January 2004
Advanced
Rev 1
Changes (Pg. 1, 6, 10, 11, 12, 15, 16, 17)
1.1 Change status to Preliminary
1.2 Change maximum storage temperature to 125°C
1.3 Add 333Mbs/166MHz speed grade
1.4 Change typical weight to 1.5g
1.5 Add thermal resistance values
1.6 PCN04019 — Change maximum package body thickness
to 2.56mm
June 2005
Preliminary
Rev 2
Changes (Pg. 1 - 17)
2.1 Change status to Final
2.2 Change 333Mbs CAS latency to 133/166 for Military
Temperature and 166/166 for Industrial Temerature.
2.3 ICC1 Burst Length change from 2 to 4
2.4 ICCS; TREFC = TRFC (Min) correction
2.5 Refresh to refresh command interval at Military
temperature tREFC = 35μs, tREFI = 3.9μs
2.6 Added AC Input Operating Conditions Table
2.7 Note number updates page 11, 12, 15
2.8 Data rate corrected form MHz to Mbs
2.9 Note 48 removed (Duplicate)
September 2005
Final
Rev 3
Changes (Pg. 3)
3.1 Correction to pin out
June 2006
Final
Rev 4
Changes (Pg. 1, 11, 15)
4.1 Correction of ViL Min
4.2 Added note on solder ball metallurgy
June 2006
Final
Rev 5
Changes (Pg. 1, 10, 17)
5.1 Update thermal resistance values to typical
July 2006
Final
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3E32M64S-200SBM | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 200 MHZ, 208 PBGA, MIL-TEMP. - Bulk |
| W3E32M64S-250BC | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 250 MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E32M64S-250BI | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 250 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E32M64S-250BM | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 250 MHZ, 219 PBGA, MIL-TEMP. - Bulk |
| W3E32M64S-250SBC | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 250 MHZ, 208 PBGA, COMMERCIAL TEMP. - Bulk |
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