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參數(shù)資料
| 型號： | W3E32M64S-200SBI |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | DRAM |
| 英文描述： | 32M X 64 DDR DRAM, 0.8 ns, PBGA208 |
| 封裝： | 13 X 22 MM, PLASTIC, BGA-208 |
| 文件頁數(shù)： | 3/18頁 |
| 文件大小： | 648K |
| 代理商： | W3E32M64S-200SBI |
11
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3E32M64S-XSBX
January 2008
Rev. 6
ICC SPECIFICATIONS AND CONDITIONS
(NOTES 1-5, 10, 12, 14, 46)
VCC, VCCQ = +2.5V ± 0.2V; -55°C TA +125°C
Parameter/Condition
Symbol
MAX
333Mbs
250Mbs
266Mbs
200Mbs Units
OPERATING CURRENT: One bank; Active-Precharge; tRC = tRC (MIN); tCK = tCK (MIN); DQ, DM, and DQS inputs
changing once per clock cyle; Address and control inputs changing once every two clock cycles; (22, 47)
ICC0
520
460
mA
OPERATING CURRENT: One bank; Active-Read-Precharge; Burst = 4; tRC = tRC (MIN); tCK = tCK (MIN); IOUT =
0mA; Address and control inputs changing once per clock cycle (22, 47)
ICC1
640
580
mA
PRECHARGE POWER-DOWN STANDBY CURRENT: All banks idle; Power-down mode; tCK = tCK (MIN); CKE
= LOW; (23, 32, 49)
ICC2P
20
mA
IDLE STANDBY CURRENT: CS = HIGH; All banks idle; tCK = tCK (MIN); CKE = HIGH; Address and other control
inputs changing once per clock cycle. VIN = VREF for DQ, DQS, and DM (50)
ICC2F
180
160
mA
ACTIVE POWER-DOWN STANDBY CURRENT: One bank active; Power-down mode; tCK = tCK (MIN); CKE =
LOW (23, 32, 49)
ICC3P
140
120
mA
ACTIVE STANDBY CURRENT: CS = HIGH; CKE = HIGH; One bank; Active-Precharge; tRC = tRAS (MAX); tCK =
tCK (MIN); DQ, DM, and DQS inputs changing twice per clock cycle; Address and other control inputs changing
once per clock cycle (22)
ICC3N
200
180
mA
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One bank active; Address and control inputs
changing once per clock cycle; tCK = tCK (MIN); IOUT = 0mA (22, 47)
ICC4R
660
580
mA
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One bank active; Address and control inputs
changing once per clock cycle; tCK = tCK (MIN); DQ, DM, and DQS inputs changing twice per clock cycle (22)
ICC4W
780
640
540
mA
AUTO REFRESH CURRENT
tREFC = tRFC (MIN) (49)
ICC5
1,160
1,120
mA
tREFC = 7.8125μs (27, 49)
ICC5A
40
mA
SELF REFRESH CURRENT: CKE 0.2V
Standard (11)
ICC6
20
mA
OPERATING CURRENT: Four bank interleaving READs (BL=4) with auto precharge, tRC =tRC (MIN); tCK = tCK (MIN);
Address and control inputs change only during Active READ or WRITE commands. (22, 48)
ICC7
1,620
1,600
1,400
mA
AC INPUT OPERATING CONDITIONS
VCC, VCCQ = +2.5V ± 0.2V; -55°C TA 125°C
Parameter/Condition
Symbol
Min
Max
Units
Input High (Logic 1) Voltage
VIH
VREF + 0.5
-
V
Input Low (Logic 0) Voltage
VIL
-VREF - 0.5
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3E32M64S-200SBM | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 200 MHZ, 208 PBGA, MIL-TEMP. - Bulk |
| W3E32M64S-250BC | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 250 MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E32M64S-250BI | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 250 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E32M64S-250BM | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 250 MHZ, 219 PBGA, MIL-TEMP. - Bulk |
| W3E32M64S-250SBC | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 250 MHZ, 208 PBGA, COMMERCIAL TEMP. - Bulk |
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