參數(shù)資料
型號: VG36641641BT
廠商: Vanguard International Semiconductor Corporation
英文描述: CMOS Synchronous Dynamic RAM
中文描述: 同步動態(tài)隨機存儲器的CMOS
文件頁數(shù): 62/69頁
文件大小: 1364K
代理商: VG36641641BT
Document :1G5-0177
Rev.2
Page 62
VIS
VG36644041DT / VG36648041DT / VG36641641DT
CMOS Synchronous Dynamic RAM
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Full Page Write Cycle (1 of 2)
CLK
CKE
CS
RAS
CAS
WE
A10
ADD
DQM
DQ
tCK2
Burst Length=Full Page, CAS Latency=2
Activate
Command
Bank A
Write
Hi-Z
Command
Bank A
Ra
QAa+1
The burst counter wraps
from the highest order
page address back to zero
during this time interval
Burst Stop
Command
Write
CoBank B
QAa
Full page burst operation
does not terminate when
the burst length is satisfied;
the burst counter increments
and continues bursting
beginning with the starting
address
Ra
Ca
Rb
tBDL
High
Activate
Command
Bank B
Ra
Rb
Ca
QAa+2 QAa+3 QAa-1
QAa
QAa+1
QBa
QBa+1 QBa+2 QBa+3 QBa+4 QBa+5
Activate
Command
Bank B
Precharge
Command
Bank B
QBa+6
Data is ignored
Ra
* BS1=”L”, Bank C,D = Idle
*BS0
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