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參數(shù)資料
| 型號(hào)： | V59C1G01408QAJ37E |
| 廠商： | PROMOS TECHNOLOGIES INC |
| 元件分類： | DRAM |
| 英文描述： | 256M X 4 DDR DRAM, 0.5 ns, PBGA68 |
| 封裝： | ROHS COMPLIANT, FBGA-68 |
| 文件頁(yè)數(shù)： | 57/79頁(yè) |
| 文件大小： | 1029K |
| 代理商： | V59C1G01408QAJ37E |
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60
V59C1G01(408/808/168)QA Rev. 1.2 April 2008
ProMOS TECHNOLOGIES
V59C1G01(408/808/168)QA
Power and ground clamps are required on the following input only pins:
a) BA0-BAx
b) A0-Axx
c) RAS
d) CAS
e) WE
f) CS
g) ODT
h) CKE
AC overshoot/undershoot specification for clock, data, strobe, and mask pins:
DQ, (U/L/R)DQS, (U/L/R)DQS, DM, CK, CK
Parameter
Specification
DDR2-667
DDR2-800
Maximum peak amplitude allowed for overshoot area (See Figure 75):
0.5 V
Maximum peak amplitude allowed for undershoot area (See Figure 75):
0.5 V
Maximum overshoot area above VDDQ (See Figure 75).
0.23 V-ns
Maximum undershoot area below VSSQ (See Figure 75).
0.23 V-ns
Overshoot Area
Maximum Amplitude
VDD
Undershoot Area
Maximum Amplitude
VSS
Volts
(V)
Time (ns)
AC overshoot and undershoot definition for address and control pins
Overshoot Area
Maximum Amplitude
VDDQ
Undershoot Area
Maximum Amplitude
VSSQ
Volts
(V)
Time (ns)
AC overshoot and undershoot definition for clock, data, strobe, and mask pins
AC & DC operating conditions (cont'd)
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