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| 型號： | S29PL064J |
| 廠商： | Spansion Inc. |
| 英文描述： | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| 中文描述： | 3.0伏的CMOS只，同步讀/寫閃存與增強(qiáng)VersatileIO控制記憶 |
| 文件頁數(shù)： | 84/106頁 |
| 文件大?。?/td> | 1997K |
| 代理商： | S29PL064J |
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82
S29PL127J/S29PL129J/S29PL064J/S29PL032J
31107A62 April 7, 2005
P R E L I M I N A R Y
DC Characteristics
Notes:
1. The I
CC
current listed is typically less than 5 mA/MHz, with OE# at V
IH
.
2. Maximum I
CC
specifications are tested with V
CC
= V
CCmax
.
3. I
CC
active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30 ns. Typical sleep
mode current is 0.2
μ
A.
5. Not 100% tested.
6. In S29PL129J there are two CE# (CE1#, CE2#).
7. Valid CE1#/CE2# conditions: (CE1# = V
IL,
CE2# = V
IH,
) or (CE1# = V
IH,
CE2# = V
IL
) or (CE1# = V
IH,
CE2# = V
IH
)
Table 24.
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
V
CC
= V
CC max
; V
ID
= 12.5 V
V
CC
= V
CC max
; V
ID
= 12.5 V
V
OUT
= V
SS
to V
CC
, OE# = V
IH
V
CC
= V
CC max
±
1.0
μA
I
LIT
I
LR
A9, OE#, RESET# Input Load Current
35
μA
Reset Leakage Current
35
μA
I
LO
Output Leakage Current
±
1.0
μA
I
CC1
V
CC
Active Read Current (Notes
1
,
2
)
OE# = V
IH
, V
CC
= V
CC max
(Note 1)
5 MHz
20
30
mA
10 MHz
45
55
I
CC2
V
CC
Active Write Current (Notes
2
,
3
)
OE# = V
IH
, WE# = V
IL
CE#, RESET#, WP#/ACC
= V
IO
±
0.3 V
RESET# = V
SS
±
0.3 V
V
IH
= V
IO
±
0.3 V;
V
IL
= V
SS
±
0.3 V
15
25
mA
I
CC3
V
CC
Standby Current (
Note 2
)
0.2
5
μA
I
CC4
V
CC
Reset Current (
Note 2
)
0.2
5
μA
I
CC5
Automatic Sleep Mode (Notes
2
,
4
)
0.2
5
μA
I
CC6
V
Active Read-While-Program Current
(Notes
1
,
2
)
OE# = V
IH
,
5 MHz
21
45
mA
10 MHz
46
70
I
CC7
V
Active Read-While-Erase Current
(Notes
1
,
2
)
OE# = V
IH
,
5 MHz
21
45
mA
10 MHz
46
70
I
CC8
V
Active Program-While-Erase-
Suspended Current (Notes
2
,
5
)
OE# = V
IH
17
25
mA
I
CC9
V
CC
Active Page Read Current (
Note 2
)
OE# = V
IH
, 8 word Page Read
V
IO
= 1.65–1.95 V (PL127J and PL129J)
V
IO
= 2.7–3.6 V
V
IO
= 1.65–1.95 V (PL127J AND PL129J)
V
IO
= 2.7–3.6 V
V
CC
= 3.0 V ± 10%
10
15
mA
V
IL
Input Low Voltage
–0.4
0.4
V
–0.5
0.8
V
V
IH
Input High Voltage
V
IO
–0.4
2.0
V
IO
+0.4
V
CC
+0.3
9.5
V
V
V
HH
Voltage for ACC Program Acceleration
8.5
V
V
ID
Voltage for Autoselect and Temporary
Sector Unprotect
V
CC
= 3.0 V
±
10%
11.5
12.5
V
V
OL
Output Low Voltage
I
= 100 μA, V
= V
, V
IO
= 1.65–1.95
V (PL127J AND PL129J)
0.1
V
I
OL
= 2.0 mA, V
CC
= V
CC min
, V
IO
= 2.7–3.6 V
I
= –100 μA, V
= V
, V
=
1.65–1.95 V (PL127J AND PL129J)
0.4
V
V
OH
Output High Voltage
V
IO
–0.1
V
I
OH
= –2.0 mA, V
CC
= V
CC min
, V
IO
= 2.7–3.6
V
2.4
V
V
LKO
Low V
CC
Lock-Out Voltage (
Note 5
)
2.3
2.5
V
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| S29PL064J55BFI120 | 功能描述:閃存 64Mb 3V 55ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29PL064J60BAI120 | 制造商:Spansion 功能描述:FLASH MEM PARALLEL 2.7V TO 3.6V 64M-BIT 4M X 16 60NS 48-PIN - Trays |
| S29PL064J60BFI120 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 4MX16 60NS 48FBGA - Trays |
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