- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374663 > S29PL064J (Spansion Inc.) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control PDF資料下載
參數(shù)資料
| 型號： | S29PL064J |
| 廠商： | Spansion Inc. |
| 英文描述： | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| 中文描述： | 3.0伏的CMOS只，同步讀/寫閃存與增強(qiáng)VersatileIO控制記憶 |
| 文件頁數(shù)： | 23/106頁 |
| 文件大小： | 1997K |
| 代理商： | S29PL064J |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁當(dāng)前第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁
April 7, 200531107A62
S29PL127J/S29PL129J/S29PL064J/S29PL032J
21
P R E L I M I N A R Y
Device Bus Operations
This section describes the requirements and use of the device bus operations,
which are initiated through the internal command register. The command register
itself does not occupy any addressable memory location. The register is a latch
used to store the commands, along with the address and data information
needed to execute the command. The contents of the register serve as inputs to
the internal state machine. The state machine outputs dictate the function of the
device.
Table 1
lists the device bus operations, the inputs and control levels they
require, and the resulting output. The following subsections describe each of
these operations in further detail.
Legend:
L = Logic Low = V
IL
, H = Logic High = V
, V
= 11.5–12.5
V, V
HH
= 8.5–9.5
V, X = Don’t Care, SA = Sector
Address, A
IN
= Address In, D
IN
= Data In, D
OUT
= Data Out
Notes:
1. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the
"
High Voltage Sector Protection
" section section.
2. WP#/ACC must be high when writing to upper two and lower two sectors.
Table 1.
PL127J Device Bus Operations
Operation
CE#
OE#
WE#
RESET#
WP#/ACC
Addresses
(Amax–A0)
DQ15–
DQ0
Read
L
L
H
H
X
A
IN
D
OUT
Write
L
H
L
H
X (Note
2
)
A
IN
D
IN
Standby
V
±
0.3 V
X
X
V
±
0.3 V
X (Note
2
)
X
High-Z
Output Disable
L
H
H
H
X
X
High-Z
Reset
X
X
X
L
X
X
High-Z
Temporary Sector Unprotect (High Voltage)
X
X
X
V
ID
X
A
IN
D
IN
Table 2.
PL129J Device Bus Operations
Operation
CE1#
CE2#
OE#
WE#
RESET#
WP#/ACC
Addresses
(A21–A0)
DQ15–
DQ0
Read
L
H
L
H
H
X
A
IN
D
OUT
H
L
Write
L
H
H
L
H
X
(
Note 2
)
A
IN
D
IN
H
L
Standby
V
±
0.3 V
V
±
0.3 V
X
X
V
±
0.3 V
X
X
High-Z
Output Disable
L
L
H
H
H
X
X
High-Z
Reset
X
X
X
X
L
X
X
High-Z
Temporary Sector Unprotect
(High Voltage)
X
X
X
X
V
ID
X
A
IN
D
IN
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29PL127J | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL127J55 | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL127J60 | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL127J65 | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL127J70 | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29PL064J55BFI120 | 功能描述:閃存 64Mb 3V 55ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29PL064J60BAI120 | 制造商:Spansion 功能描述:FLASH MEM PARALLEL 2.7V TO 3.6V 64M-BIT 4M X 16 60NS 48-PIN - Trays |
| S29PL064J60BFI120 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 4MX16 60NS 48FBGA - Trays |
| S29PL064J60BFI120(E) | 制造商:Spansion 功能描述:Cut Tape |
| S29PL064J60BFW120 | 制造商:Spansion 功能描述:64M (4MX16) 3V, PAGE MODE, HAZMAT - Trays |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。