- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374663 > S29PL064J (Spansion Inc.) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control PDF資料下載
參數(shù)資料
| 型號： | S29PL064J |
| 廠商： | Spansion Inc. |
| 英文描述： | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| 中文描述： | 3.0伏的CMOS只，同步讀/寫閃存與增強VersatileIO控制記憶 |
| 文件頁數(shù)： | 100/106頁 |
| 文件大小： | 1997K |
| 代理商： | S29PL064J |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁當前第100頁第101頁第102頁第103頁第104頁第105頁第106頁
98
S29PL127J/S29PL129J/S29PL064J/S29PL032J
31107A62 April 7, 2005
P R E L I M I N A R Y
VBH064—64-Ball Fine-pitch Ball Grid Array 8 x 11.6 mm package
(PL127J)
3330 \ 16-038.25b
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS.
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
4. e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
PACKAGE
VBH 064
JEDEC
N/A
11.60 mm x 8.00 mm NOM
PACKAGE
SYMBOL
MIN
NOM
MAX
NOTE
A
---
---
1.00
OVERALL THICKNESS
A1
0.18
---
---
BALL HEIGHT
A2
0.62
---
0.76
BODY THICKNESS
D
11.60 BSC.
BODY SIZE
E
8.00 BSC.
BODY SIZE
D1
8.80 BSC.
BALL FOOTPRINT
E1
7.20 BSC.
BALL FOOTPRINT
MD
12
ROW MATRIX SIZE D DIRECTION
ME
10
ROW MATRIX SIZE E DIRECTION
N
φ
b
e
64
TOTAL BALL COUNT
0.33
---
0.43
BALL DIAMETER
0.80 BSC.
BALL PITCH
SD / SE
0.40 BSC.
SOLDER BALL PLACEMENT
(A2-9,B1-4,B7-10,C1-K1,
M2-9,C10-K10,L1-4,L7-10,
G5-6,F5-6)
DEPOPULATED SOLDER BALLS
BOTTOM VIEW
TOP VIEW
SIDE VIEW
A1 CORNER
A2
A
10
9
10
M
L
J
K
e
C
0.05
(2X)
(2X)
C
0.05
A1
E
D
7
B
A
C
E
D
F
H
G
8
7
6
5
4
3
2
1
e
D1
E1
SE
7
B
C A
C
M
φ
0.15
φ
0.08 M
6
0.10 C
C
0.08
NX
φ
b
SD
A
B
C
SEATING PLANE
A1 CORNER
INDEX MARK
相關PDF資料 |
PDF描述 |
|---|---|
| S29PL127J | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL127J55 | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL127J60 | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL127J65 | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL127J70 | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| S29PL064J55BFI120 | 功能描述:閃存 64Mb 3V 55ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29PL064J60BAI120 | 制造商:Spansion 功能描述:FLASH MEM PARALLEL 2.7V TO 3.6V 64M-BIT 4M X 16 60NS 48-PIN - Trays |
| S29PL064J60BFI120 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 4MX16 60NS 48FBGA - Trays |
| S29PL064J60BFI120(E) | 制造商:Spansion 功能描述:Cut Tape |
| S29PL064J60BFW120 | 制造商:Spansion 功能描述:64M (4MX16) 3V, PAGE MODE, HAZMAT - Trays |
發(fā)布緊急采購，3分鐘左右您將得到回復。