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參數(shù)資料
| 型號(hào)： | S29PL064J |
| 廠商： | Spansion Inc. |
| 英文描述： | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| 中文描述： | 3.0伏的CMOS只，同步讀/寫閃存與增強(qiáng)VersatileIO控制記憶 |
| 文件頁數(shù)： | 58/106頁 |
| 文件大小： | 1997K |
| 代理商： | S29PL064J |
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56
S29PL127J/S29PL129J/S29PL064J/S29PL032J
31107A62 April 7, 2005
P R E L I M I N A R Y
Figure 1.
In-System Sector Protection/Sector Unprotection Algorithms
Sector Protect:
Write 60h to sector
address with
A7-A0 =
00000010
Set up sector
address
Wait 100 μs
Verify Sector
Protect: Write 40h
to sector address
with A7-A0 =
00000010
Read from
sector address
with A7-A0 =
00000010
START
PLSCNT = 1
RESET# = V
ID
Wait 4
μ
s
First Write
Cycle = 60h
Data = 01h
Remove V
from RESET#
Write reset
command
Sector Protect
complete
Yes
Yes
No
PLSCNT
= 25
Yes
Device failed
Increment
PLSCNT
Temporary Sector
Unprotect Mode
No
Sector Unprotect:
Write 60h to sector
address with
A7-A0 =
01000010
Set up first sector
address
Wait 1.2 ms
Verify Sector
Unprotect: Write
40h to sector
address with
A7-A0 =
00000010
Read from
sector address
with A7-A0 =
00000010
START
PLSCNT = 1
RESET# = V
ID
Wait 4
μ
s
Data = 00h
Last sector
verified
Remove V
from RESET#
Write reset
command
Sector Unprotect
complete
Yes
No
PLSCNT
= 1000
Yes
Device failed
Increment
PLSCNT
Temporary Sector
Unprotect Mode
No
All sectors
protected
Yes
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
unprotect address
Set up
next sector
address
No
Yes
No
Yes
No
No
Yes
No
Sector Protect
Algorithm
Sector Unprotect
Algorithm
First Write
Cycle = 60h
Protect another
sector
Reset
PLSCNT = 1
Remove V
from RESET#
Write reset
command
Sector Protect
complete
Remove V
from RESET#
Write reset
command
Sector Unprotect
complete
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| S29PL127J60 | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29PL064J55BFI120 | 功能描述:閃存 64Mb 3V 55ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29PL064J60BAI120 | 制造商:Spansion 功能描述:FLASH MEM PARALLEL 2.7V TO 3.6V 64M-BIT 4M X 16 60NS 48-PIN - Trays |
| S29PL064J60BFI120 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 4MX16 60NS 48FBGA - Trays |
| S29PL064J60BFI120(E) | 制造商:Spansion 功能描述:Cut Tape |
| S29PL064J60BFW120 | 制造商:Spansion 功能描述:64M (4MX16) 3V, PAGE MODE, HAZMAT - Trays |
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