參數(shù)資料
型號(hào): S29PL032J65BFI150
廠商: SPANSION LLC
元件分類: PROM
英文描述: 2M X 16 FLASH 3V PROM, 65 ns, PBGA56
封裝: 7 X 9 MM, LEAD FREE, FBGA-56
文件頁(yè)數(shù): 64/94頁(yè)
文件大小: 949K
代理商: S29PL032J65BFI150
July 29, 2005 S29PL-J_00_A8
S29PL-J
65
Advance
Information
Notes:
1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the
sector being erased. During chip erase, a valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5.
Figure 11 Data# Polling Algorithm
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algo-
rithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE#
pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can
be tied together in parallel with a pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes pro-
gramming in the Erase Suspend mode.) If the output is high (Ready), the device is in the read
mode, the standby mode, or one of the banks is in the erase-suspend-read mode.
Table 23 shows the outputs for RY/BY#.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress
or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be
read at any address, and is valid after the rising edge of the final WE# pulse in the command
sequence (prior to the program or erase operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any ad-
dress cause DQ6 to toggle. The system may use either OE# or CE# to control the read cycles.
When the operation is complete, DQ6 stops toggling.
DQ7 = Data?
Yes
No
DQ5 = 1?
No
Yes
FAIL
PASS
Read DQ7–DQ0
Addr = VA
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
START
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