參數(shù)資料
型號: S29PL032J65BFI150
廠商: SPANSION LLC
元件分類: PROM
英文描述: 2M X 16 FLASH 3V PROM, 65 ns, PBGA56
封裝: 7 X 9 MM, LEAD FREE, FBGA-56
文件頁數(shù): 51/94頁
文件大?。?/td> 949K
代理商: S29PL032J65BFI150
July 29, 2005 S29PL-J_00_A8
S29PL-J
53
Advance
Information
Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software inter-
rogation handshake, which allows specific vendor-specified software algorithms to be used for
entire families of devices. Software support can then be device-independent, JEDEC ID-indepen-
dent, and forward- and backward-compatible for the specified flash device families. Flash
vendors can standardize their existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h,
to address 55h, any time the device is ready to read array data. The system can read CFI infor-
mation at the addresses given in Tables 17–20. To terminate reading CFI data, the system must
write the reset command. The CFI Query mode is not accessible when the device is executing an
Embedded Program or embedded Erase algorithm.
The system can also write the CFI query command when the device is in the autoselect mode.
The device enters the CFI query mode, and the system can read CFI data at the addresses given
in Tables 17–20. The system must write the reset command to return the device to reading array
data.
For further information, please refer to the CFI Specification and CFI Publication 100. Contact
your local sales office for copies of these documents.
Table 17 CFI Query Identification String
Addresses
Data
Description
10h
11h
12h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
0002h
0000h
Primary OEM Command Set
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Table 18 System Interface String
Addresses
Data
Description
1Bh
0027h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0036h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
0003h
Typical timeout per single byte/word write 2N s
20h
0000h
Typical timeout for Min. size buffer write 2N
s (00h = not supported)
21h
0009h
Typical timeout per individual block erase 2N ms
22h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
0004h
Max. timeout for byte/word write 2N times typical
24h
0000h
Max. timeout for buffer write 2N times typical
25h
0004h
Max. timeout per individual block erase 2N times typical
26h
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
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