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參數(shù)資料
| 型號： | S29PL032J65BFI150 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 2M X 16 FLASH 3V PROM, 65 ns, PBGA56 |
| 封裝： | 7 X 9 MM, LEAD FREE, FBGA-56 |
| 文件頁數(shù)： | 14/94頁 |
| 文件大?。?/td> | 949K |
| 代理商： | S29PL032J65BFI150 |
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July 29, 2005 S29PL-J_00_A8
S29PL-J
19
Advance
Information
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and
erasing sectors of memory), the system must drive WE# and CE# (CE1# or CE#2 in PL129J) to
VIL, and OE# to VIH.
The device features an Unlock Bypass mode to facilitate faster programming. Once a bank en-
ters the Unlock Bypass mode, only two write cycles are required to program a word, instead of
four. The “Word Program Command Sequence” section has details on programming data to the
device using both standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device.
Table 4 indicates
the set of address space that each sector occupies. A “bank address” is the set of address bits
required to uniquely select a bank. Similarly, a “sector address” refers to the address bits re-
quired to uniquely select a sector. The “Command Definitions” section has details on erasing a
sector or the entire chip, or suspending/resuming the erase operation.
ICC2 in the DC Characteristics table represents the active current specification for the write mode.
See the timing specification tables and timing diagrams in the Reset section for write operations.
Accelerated Program Operation
The device offers accelerated program operations through the ACC function. This function is pri-
marily intended to allow faster manufacturing throughput at the factory.
If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock
Bypass mode, temporarily unprotects any protected sectors, and uses the higher voltage on the
pin to reduce the time required for program operations. The system would use a two-cycle pro-
gram command sequence as required by the Unlock Bypass mode. Removing VHH from the
WP#/ACC pin returns the device to normal operation. Note that VHH must not be asserted on
WP#/ACC for operations other than accelerated programming, or device damage may result. In
addition, the WP#/ACC pin should be raised to VCC when not in use. That is, the WP#/ACC pin
should not be left floating or unconnected; inconsistent behavior of the device may result.
Autoselect Functions
If the system writes the autoselect command sequence, the device enters the autoselect mode.
The system can then read autoselect codes from the internal register (which is separate from
the memory array) on DQ15–DQ0. Standard read cycle timings apply in this mode. Refer to the
Secured Silicon Sector Addresses and Autoselect Command Sequence for more information.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29PL032J70BAI120 | 功能描述:閃存 32Mb 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29PL032J70BAI122 | 功能描述:閃存 32MB 閃存 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29PL032J70BAW120 | 功能描述:閃存 32MB 閃存 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29PL032J70BFI120 | 功能描述:閃存 32Mb 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29PL032J70BFI120(E) | 制造商:Spansion 功能描述:Cut Tape |
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