參數(shù)資料
型號： S29PL032J65BFI150
廠商： SPANSION LLC
元件分類： PROM
英文描述： 2M X 16 FLASH 3V PROM, 65 ns, PBGA56
封裝： 7 X 9 MM, LEAD FREE, FBGA-56
文件頁數(shù)： 60/94頁
文件大?。?/td> 949K
代理商： S29PL032J65BFI150
July 29, 2005 S29PL-J_00_A8
S29PL-J
61
Advance
Information
In the erase-suspend-read mode, the system can also issue the autoselect command sequence.
The device allows reading autoselect codes even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the device exits the autoselect mode, the device
reverts to the Erase Suspend mode, and is ready for another valid operation. Refer to the Se-
To resume the sector erase operation, the system must write the Erase Resume command (ad-
dress bits are don’t care). The bank address of the erase-suspended bank is required when
writing this command. Further writes of the Resume command are ignored. Another Erase Sus-
pend command can be written after the chip has resumed erasing.
If the Persistent Sector Protection Mode Locking Bit is verified as programmed without margin,
the Persistent Sector Protection Mode Locking Bit Program Command should be reissued to im-
prove program margin. If the Secured Silicon Sector Protection Bit is verified as programmed
without margin, the Secured Silicon Sector Protection Bit Program Command should be reissued
to improve program margin. After programming a PPB, two additional cycles are needed to
determine whether the PPB has been programmed with margin. If the PPB has been pro-
grammed without margin, the program command should be reissued to improve the program
margin. Also note that the total number of PPB program/erase cycles is limited to 100 cycles.
Cycling the PPBs beyond 100 cycles is not guaranteed.
After erasing the PPBs, two additional cycles are needed to determine whether the PPB has been
erased with margin. If the PPBs has been erased without margin, the erase command should be
reissued to improve the program margin. The programming of either the PPB or DYB for a given
sector or sector group can be verified by writing a Sector Protection Status command to the
device.
Note that there is no single command to independently verify the programming of a DYB for a
given sector group.
Program Suspend/Program Resume Commands
The Program Suspend command allows the system to interrupt an embedded programming op-
eration so that data can read from any non-suspended sector. When the Program Suspend
command is written during a programming process, the device halts the programming operation
within tPSL (program suspend latency) and updates the status bits. Addresses are “don’t-cares”
when writing the Program Suspend command. After the programming operation has been sus-
pended, the system can read array data from any non-suspended sector. The Program Suspend
command may also be issued during a programming operation while an erase is suspended. In
this case, data may be read from any addresses not in Erase Suspend or Program Suspend. If a
read is needed from the Secured Silicon Sector area, then user must use the proper command
sequences to enter and exit this region. The system may also write the autoselect command se-
quence when the device is in Program Suspend mode. The device allows reading autoselect
codes in the suspended sectors, since the codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to Program Suspend mode, and is ready for
another valid operation. See “Autoselect Command Sequence” for more information. After the
Program Resume command is written, the device reverts to programming. The system can de-
termine the status of the program operation using the DQ7 or DQ6 status bits, just as in the
standard program operation. See “Write Operation Status” for more information. The system
must write the Program Resume command (address bits are “don’t care”) to exit the Program
Suspend mode and continue the programming operation. Further writes of the Program Resume
command are ignored. Another Program Suspend command can be written after the device has
resumed programming.
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S29PL032J70BFI120 功能描述:閃存 32Mb 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29PL032J70BFI120(E) 制造商:Spansion 功能描述:Cut Tape
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