參數(shù)資料
型號: S29GL064M90TAIR42
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology
中文描述: 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝: MO-142-EC, TSOP-48
文件頁數(shù): 99/116頁
文件大?。?/td> 1656K
代理商: S29GL064M90TAIR42
October 10, 2006 S29GL-M_00_B6
S29GL-M MirrorBit
TM
Flash Family
97
D a t a S h e e t
Notes:
1.
2.
3.
4.
Figure 24. Alternate CE# Controlled Write (Erase/Program) Operation Timings
Figure indicates last two bus cycles of a program or erase operation.
PA = program address, SA = sector address, PD = program data.
DQ7# is the complement of the data written to the device. D
OUT
is the data written to the device.
Illustration shows device in word mode.
t
GHEL
t
WS
OE#
CE#
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
PBD for program
55 for erase
t
RH
t
WHWH1 or 2
t
POLL
RY/BY#
t
WH
29 for program buffer to flash
30 for sector erase
10 for chip erase
PBA for program
2AA for erase
SA for program buffer to flash
SA for sector erase
555 for chip erase
t
BUSY
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