參數(shù)資料
型號： S29GL064M90TAIR42
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology
中文描述： 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝： MO-142-EC, TSOP-48
文件頁數(shù)： 65/116頁
文件大?。?/td> 1656K
代理商： S29GL064M90TAIR42
October 10, 2006 S29GL-M_00_B6
S29GL-M MirrorBit
TM
Flash Family
63
D a t a S h e e t
Write to an address in a sector different than the one specified during the Write-Buffer-Load
command.
Write an Address/Data pair to a different write-buffer-page than the one selected by the
Starting Address during the write buffer data loading stage of the operation.
Write data other than the Confirm Command after the specified number of data load cycles.
The abort condition is indicated by DQ1 = 1, DQ7 = DATA# (for the last address location loaded),
DQ6 = toggle, and DQ5= 0. A Write-to-Buffer-Abort Reset command sequence must be written to
reset the device for the next operation.
Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when a pro-
gram operation is in progress.
This flash device is capable of handling multiple write buffer
programming operations on the same write buffer address range without intervening erases. For
applications requiring incremental bit programming, a modified programming method is required;
please contact your local Spansion representative.
Any bit in a w rite buffer address range
cannot be programmed from “ 0” back to a “ 1.”
Attempting to do so can cause the device to
set DQ5= 1, of cause the DQ7 and DQ6 status bits to indicate the operation was successful. How-
ever, a succeeding read shows that the data is still “0.” Only erase operations can convert a “0”
to a “1.”
Accelerated Program
The device offers accelerated program operations through the WP#/ACC or ACC pin depending
on the particular product. When the system asserts V
HH
on the WP#/ACC or ACC pin. The device
uses the higher voltage on the WP#/ACC or ACC pin to accelerate the operation.
Note that the
WP#/
ACC pin must not be at V
HH
for operations other than accelerated programming, or device
damage can result. WP# has an internal pullup; when unconnected, WP# is at V
IH
.
Figure 3
illustrates the algorithm for the program operation. See
Erase and Program Operations—
S29GL032M Only
and
AC Characteristics
for parameters, and
Figure 14
for timing diagrams.
相關(guān)PDF資料
PDF描述
S29GL064M90TAIR43 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology
S29GL064M90TAIR70 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology
S29GL064M90TAIR72 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology
S29GL064M90TAIR73 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology
S29GL064M90TAIR80 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL064M90TAIR60 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 64M-Bit 4M x 16 90ns 48-Pin TSOP Tray
S29GL064M90TAIR70 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 4M x 16 90ns 48-Pin TSOP Tray
S29GL064M90TFIR20 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 56-Pin TSOP Tray
S29GL064M90TFIR30 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 48-Pin TSOP Tray
S29GL064M90TFIR4 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,4MX16/8MX8,CMOS,TSSOP,48PIN,PLASTIC
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